The coefficient of thermal expansion (CTE), biaxial modulus, and stress of some amorphous
semiconductors (a-Si: H, aC: H, a-Ge: H, and a-GeC x: H) and metallic (Ag and Al) thin films …

Ultrathin 1D optical cavities enable strong and spectrally broad absorption in solar cells.
This approach requires highly absorptive materials as well as tailoring of the phase shifts …

Radio frequency glow discharge chemical vapor deposition has been used to deposit thin
films of a-Si 1− x Ge x: H which possess optoelectronic properties that are greatly improved …

Stress measurements of a-Ge: H thin films deposited by rf glow discharge using a large
variety of deposition conditions are reported. It was observed that the stress of the films is …

Investigations into the kinetics and mechanism of the thermal decomposition of the novel
organometallic precursor 1, 3-di-tert-butyl-1, 3, 2-diazagarmolidin-2-ylidine are reported. On …

We propose and discuss a deconvolution procedure to analyze quantitatively optical
absorption spectra. This procedure is used to determine the density of states distribution in …

The salient feature of next generation infrared (IR) on-chip integrated sensors is likely to be
sensitivity in a narrow wavelength band that is tuneable over a selected range of the IR …

A detailed study of the influence of hydrogen and argon partial pressures, substrate
temperature, and dc power on the composition and the optoelectronic properties of …

The variation of a‐Si: H film quality, deposited by a rf glow discharge of pure silane, is
examined as a function of the interelectrode distance for two different pressures. Constant …

Thin films of hydrogenated amorphous germanium (a-Ge: H) deposited at high growth rate
by radiofrequency (RF) glow discharge with 1sccm GeH4 diluted in 40sccm H2 have been …