Interplay between superconducting fluctuations and weak localization in disordered TiN thin films
The interplay between superconducting fluctuations (SFs) and weak localization (WL) has
been probed by temperature dependent resistance [R (T)] and magnetoresistance (MR) …
been probed by temperature dependent resistance [R (T)] and magnetoresistance (MR) …
Efficient Emission in the Telecom Range from Quantum Dots Embedded in Photonic Structures Fabricated by Focused Ion Beam Milling
M Jaworski, A Chudzyńska… - Acta Physica Polonica …, 2022 - appol.ifpan.edu.pl
In the present work, we focus on the development and optimization of the photonic structures
fabrication with (In, Ga) As/GaAs quantum dots as an active part. Such structures offer the …
fabrication with (In, Ga) As/GaAs quantum dots as an active part. Such structures offer the …
Low-temperature electronic transport properties of ruthenium thin films and nanowires
The electronic transport properties of atomic-layer-deposited Ru thin films and nanowires
were investigated in the temperature range between 0.1 and 30 K by means of …
were investigated in the temperature range between 0.1 and 30 K by means of …
Magnetic interactions and high-field magnetotransport properties of Ge1-x-ySnxMnyTe epitaxial layers
A Khaliq, P Dziawa, BC Camargo, S Lewińska… - Journal of Magnetism …, 2023 - Elsevier
In this work, we present the structural, magnetic and magnetotransport results of Ge 1− x− y
Sn x Mn y Te thin layers with x= 0.076–0.22 and y= 0.051–0.16. The samples were grown …
Sn x Mn y Te thin layers with x= 0.076–0.22 and y= 0.051–0.16. The samples were grown …
Enhanced quantum oscillations and scattering effect in quaternary InAlGaN/GaN two-dimensional electron gas
C Karmakar, RK Kaneriya, M Malasi, S Rathod… - Applied Physics …, 2023 - pubs.aip.org
Quantum transport properties of a large bandgap In 0.15 Al 0.79 Ga 0.06 N/GaN quaternary
GaN high electron mobility transistor (HEMT) heterostructure are studied at low …
GaN high electron mobility transistor (HEMT) heterostructure are studied at low …
[HTML][HTML] Detection of Dirac fermions in capped SnTe film via magnetotransport measurements
S de Castro, E Abramof, PHO Rappl… - Journal of Applied …, 2024 - pubs.aip.org
In this work, we present the investigation of the magnetotransport properties of a capped
SnTe film, grown by molecular beam epitaxy, using Shubnikov–de Haas oscillations for the …
SnTe film, grown by molecular beam epitaxy, using Shubnikov–de Haas oscillations for the …
Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
Topological insulators possess non-conductive bulk and present surface states, henceforth,
they are electrically conductive along their boundaries. Bismuth selenide (Bi 2 Se 3) is one …
they are electrically conductive along their boundaries. Bismuth selenide (Bi 2 Se 3) is one …
Low Temperature Weak Anti-Localization Effect in the GeTe and SnTe Epitaxial Layers
A Khaliq, P Dziawa, R Minikaev… - … Physica Polonica A …, 2022 - appol.ifpan.edu.pl
IV–VI semiconductors possess intriguing multifunctional characteristics, such as topological
surface states, ferroelectricity at room temperature, and giant Rashba spin-splitting, giving …
surface states, ferroelectricity at room temperature, and giant Rashba spin-splitting, giving …