Memory effects are defined as changes in the amplitude and phase of distortion components
caused by changes in modulation frequency. These are particularly important in cancelling …

Memory effects, which influence the performance of RF power amplifiers (PAs) and
predistortion-based linearizers, become more significant and critical in designing these …

The intermodulation performance of an FET in the common-source configuration is
dependent on the impedance presented to its gate and drain terminals, not only at …

Highly linear and efficient CMOS cascode power amplifiers (PAs) are developed for handset
applications. The linearity of the PAs is improved using adaptive bias circuits at the gates of …

This paper demonstrates the significant effect of baseband impedance termination on the
linearity performance of a 10W GaN HEMT device driven to deliver a peak envelope power …

Most existing methods for HPA predistortion with memory effects are based on polynomial or
indirect learning structures. Few papers concern about the memory predistortion with LUT …

A fully integrated linear CMOS power amplifier (PA) for the broadband operation is
developed for handset applications. This amplifier can handle a wideband signal. To …

This paper presents a refined modulated waveform measurement system for the robust
characterization of nonlinear microwave devices when driven by broadband multi-tone …

In this paper, an active load-pull-based large-signal modeling approach suitable for
designing and optimizing Doherty amplifiers is proposed. The optimization of the drive …

(57) ABSTRACT A device, system, and method are provided for a power amplifier
arrangement. In embodiments of a Vdd modulated power amplifier arrangement, a memory …