Previously published data for the optical band gap (Eg) of thin film CdSxTe1− x has been
reviewed and combined in a meta-analysis to provide a new set of parameters for the …

The S-Te inter-diffusion in CdTe/CdS heterojunction has been studied by X-ray diffraction,
Atomic force microscope and Spectroscopic ellipsometry. For the first time, the phase …

Abstracts The S–Te inter-diffusion at CdTe/CdS heterojunction within ITO/CdS/CdTe
multilayer is studied by Spectroscopic ellipsometry. Analysis shows that consumption of CdS …

CdSxTe1− x films were deposited on titanium and conducting glass substrates at room
temperature using 0.25 M cadmium sulphate, the concentration of sodium thiosulphate and …

In CdS/CdTe solar cells it is necessary to determine the efficiency limitations related with the
intermixing at the interface between the CdS window layer and CdTe absorber layer. So …

The lattice constants, phase transition, elastic, dielectric and dynamic properties of wide
band gaps CdS x Te 1− x semiconductors have been studied within ab initio …

Die polykristalline CdTe-Dünnschichtsolarzelle ist infolge des enormen
Kostenreduktionspotenzials auf dem Sprung zur ökonomischen Konkurrenzfähigkeit. Die …

US9799784B2 - High efficiency photovoltaic device employing cadmium sulfide telluride and
method of manufacture - Google Patents US9799784B2 - High efficiency photovoltaic device …

Polykristalline Dünnschichtsolarzellen auf der Basis von CdTe sind in Deutschland seit
1993 von der Firma ANTEC Technology GmbH in Kelkheim im Taunus entwickelt worden …

Purpose–Screen‐printing is an appropriate technique for the manufacture of large‐area
position‐sensitive detectors. The purpose of this paper is to present simple methods of paste …