Abstract Nowadays, two-dimensional crystals (2D materials) and structures with quantum
dots (0D materials) are considered as one of the most promising materials for electronics …

The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of
layer thickness d Ge (from 10 to 86 nm) and annealing temperature. The dewetting is …

A high quality Bi 2 Te 3 crystal has been grown by Bridgman method with the use of rotating
heat field. The phase purity and bulk structural quality of the crystal have been verified by …

The dewetting phenomenon that occurs during annealing of Ge films after their deposition
on oxidized Si surfaces at room temperature is studied. The agglomeration of Ge films into …

Germanium/silicon systems are among the most promising materials for development of
current semiconductor electronics and photonics. Structures with germanium quantum dots …

The formation of three-dimensional (3D) structures during Ge deposition on Si (111) at about
800 C is studied with scanning tunneling, Kelvin probe and electron microscopies, and …

Abstract The SiGe dewetting from Si (100) is found to take place during Ge deposition at 750–
950° C. The dewetting provides the formation of compact islands with lateral sizes from …

The strain relaxation during the Ge growth on Si (100) occurs vikia surface diffusion and Si-
Ge intermixing at temperatures below 800° C. The Ge diffusion into the Si substrate is an …

The directional atom drift under direct electric current (DC) flowing through a sample is a
unique tool for the surface morphology manipulation, which was previously studied in detail …

The formation of islands arrays during Ge deposition on Si (1 0 0) at high temperatures is
studied using scanning tunneling and electron microscopies. It is found that the island size …