One of the most important degradation modes in CMOS technologies, the bias temperature
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …

Today, micro-electronic circuits are undeniably and ubiquitously present in our society.
Transportation vehicles such as cars, trains, buses, and airplanes make abundant use of …

In this paper we summarize the impact of Statistical Variability (SV) on device performances
and study the impact of oxide trapped charges in combination with SV. Traps time constants …

It has recently been suggested that random telegraph noise (RTN) and the bias temperature
instability (BTI) are due to similar defects. Here we thoroughly analyze this hypothesis using …

Forthcoming technology nodes are posing major challenges on the manufacturing of
reliable (real-time) systems: process variations, accelerated degradation aging, as well as …

We report extensive statistical NBTI reliability measurements of nanoscaled FETs of different
technologies, based on which we propose a 1/area scaling rule for the statistical impact of …

Here we show that nFET and pFET time-dependent variability, in addition to the standard
time-zero variability, can be fully characterized and projected using a series of …

As semiconductor manufacturing has entered into the nanoscale era, Bias Temperature
Instability (BTI)-Negative BTI (NBTI) in PMOS transistors and Positive BTI (PBTI) in NMOS …

This paper describes the implications of bias temperature instability (BTI)-induced time-
dependent threshold voltage distributions on the performance and yield estimation of digital …

Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely
observed and known to play an important role in device's lifetime. However, its …