Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

Создание полупроводниковых структур с новыми физическими свойствами является
основной задачей нанотехнологии, имеющей целью расширение пределов …

A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is
disclosed. The method includes forming an interface layer on a portion of a substrate. A …

A cyclic adiabatic compression reactor is used for the Si powder fabrication by the
monosilane decomposition in a gas mixture with argon. Along with arbitrary agglomerations …

Photocurrent spectroscopy was employed to study interband optical transitions and the
quantum-confined Stark effect in an array of Ge/Si self-assembled quantum dots. The mean …

The spontaneous formation of nanometric and highly dense (∼ 3× 10 12 cm− 2) Ge droplets
on thin Si O 2 film on Si (001) is investigated by scanning tunneling microscopy and …

We theoretically study decoherence of two localized spins interacting via the Ruderman-
Kittel-Kasuya-Yosida (RKKY) interaction in one-, two-, and three-dimensional electron gas …

This book focuses on nanostructured semiconductors, their fabrication, and their application
in various fields such as optics, acoustics, and biomedicine. It presents a compendium of …

We theoretically discuss the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between
semiconductor quantum dots (QDs). When each QD having a local spin is coupled to the …

Quantized energy in Ge nanodots aligned over oxidized Si surfaces could be regulated by
modifying an interface atomic layer. The confining potential was evaluated from dot-size …