Binary group III-nitride based high electron mobility transistors
AW Saxler - US Patent 7,544,963, 2009 - Google Patents
Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating
binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III …
binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III …
Methods of fabricating transistors including dielectrically-supported gate electrodes
RP Smith, ST Sheppard - US Patent 7,709,269, 2010 - Google Patents
Transistors are fabricated by forming a protective layer hav ing a first opening extending
therethrough on a Substrate, forming a dielectric layer on the protective layer having a …
therethrough on a Substrate, forming a dielectric layer on the protective layer having a …
Methods of fabricating transistors including supported gate electrodes
ST Sheppard, S Allen - US Patent 7,592,211, 2009 - Google Patents
US7592211B2 - Methods of fabricating transistors including supported gate electrodes -
Google Patents US7592211B2 - Methods of fabricating transistors including supported gate …
Google Patents US7592211B2 - Methods of fabricating transistors including supported gate …
Aluminum free group III-nitride based high electron mobility transistors
AW Saxler - US Patent 7,615,774, 2009 - Google Patents
Aluminum free high electron mobility transistors (HEMTs) and methods of fabricating
aluminum free HEMTs are pro vided. In some embodiments, the aluminum free HEMTs …
aluminum free HEMTs are pro vided. In some embodiments, the aluminum free HEMTs …
Transistors having buried n-type and p-type regions beneath the source region
AW Saxler, S Sheppard, RP Smith - US Patent 7,456,443, 2008 - Google Patents
High electron mobility transistors are provided that include a non-uniform aluminum
concentration AlGaN based cap layer having a high aluminum concentration adjacent a …
concentration AlGaN based cap layer having a high aluminum concentration adjacent a …
Cap layers including aluminum nitride for nitride-based transistors
RP Smith, AW Saxler, ST Sheppard - US Patent 7,709,859, 2010 - Google Patents
High electron mobility transistors are provided that include a non-uniform aluminum
concentration AlGaN based cap layer having a high aluminum concentration adjacent a …
concentration AlGaN based cap layer having a high aluminum concentration adjacent a …
Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices
RP Smith, ST Sheppard - US Patent 8,049,252, 2011 - Google Patents
Transistors are fabricated by forming a protective layer having a first opening extending
therethrough on a substrate, forming a dielectric layer on the protective layer having a …
therethrough on a substrate, forming a dielectric layer on the protective layer having a …
High power density and/or linearity transistors
4,424,525 A 1/1984 Mimura 4,471,366 A 9/1984 Delagebeaudeuf et al. 4,727,403 A 2/1988
Hilda et a1. 4,755,867 A 7/1988 Cheng 4,788,156 A 11/1988 Stoneham et al. 4,946,547 A …
Hilda et a1. 4,755,867 A 7/1988 Cheng 4,788,156 A 11/1988 Stoneham et al. 4,946,547 A …
Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
AW Saxler - US Patent 7,084,441, 2006 - Google Patents
(54) SEMICONDUCTOR DEVICES HAVING A 5,298.445 A 3, 1994 Asano HYBRID
CHANNEL LAYER, CURRENT RE34, 861 E 2f1995 Davis et al. APERTURE …
CHANNEL LAYER, CURRENT RE34, 861 E 2f1995 Davis et al. APERTURE …
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
4.424, 525 A 1, 1984 Mimura 4,471.366 A 9/1984 Delagebeaudeufetal. 4,727.403 A 2f1988
Hilda et al. 4,755,867 A 7/1988 Cheng 4,788,156 A 11, 1988 Stoneham et al. 4.946, 547 A …
Hilda et al. 4,755,867 A 7/1988 Cheng 4,788,156 A 11, 1988 Stoneham et al. 4.946, 547 A …