After a decade of intensive research on two-dimensional (2D) materials inspired by the
discovery of graphene, the field of 2D electronics has reached a stage with booming …

Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

The initial stages of metal organic chemical vapor deposition (MOCVD) of AlN on epitaxial
graphene at temperatures in excess of 1200° C have been rationalized. The use of epitaxial …

For the first time, the IVT dataset of a Schottky diode has been accurately modelled,
parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch …

The current transport across the graphene/4 H-SiC interface has been investigated with
nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene …

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes
prepared by ultra high vacuum evaporation has been done. Analysis has been made to …

In this paper, a characterization technique for 4H-SiC Schottky diodes with varying levels of
metal-semiconductor contact inhomogeneity is proposed. A macro-model, suitable for high …

In this study, we have experimentally investigated the temperature endurance capability of
high-quality Pt-based Schottky Barrier Diodes (SBDs) fabricated on halide vapor phase …

Silicon (Si)-based photodetectors are appealing candidates due to their low cost and
compatibility with the complementary metal oxide semiconductor (CMOS) technology. The …

In this paper, micro-Raman mapping and conductive atomic force microscopy (C-AFM) were
jointly applied to investigate the structural and electrical homogeneity of quasi-free-standing …