Dislocation-free core-shell nanowires are a promising material for quantum communication
devices. The synthesis of such nanowires is associated with many expensive experiments …

We report on the absence of strain relaxation mechanism in Al 0.6 Ga 0.4 N epilayers grown
on (0001) AlN substrates for thickness as large as 3.5 μm, three-orders of magnitude beyond …

We consider the stress–strain state in α-Ga 2 O 3/α-Al 2 O 3 heterostructures, in which both
constituting phases belong to trigonal crystal system. We utilize the hexagonal geometry …

In this work, we consider film/substrate semiconductor heterostructures with a hexagonal
(wurtzite) and trigonal (corundum) crystal structure. We show that the differences between …

The experimental results of the recent years on the synthesis of semipolar wide-band III–N-
layers on a nanostructured silicon substrate are summarized. The idea of synthesis involves …

It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN
superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of …

Orientation-dependent substrates provide effective platforms for achieving α-Ga 2 O 3 with
low dislocation densities, whereas the associated strain and dislocation dynamics have not …

A theoretical model of misfit stress relaxation in film/substrate α-Ga 2 O 3/α-Al 2 O 3
heterostructures with allowance for lattice anisotropy of heterostructure materials is …

An elastic interaction of the intersecting dilatation and disclination defects located in an
infinite linear isotropic media is investigated. The eigenstrain approach is employed to …

We report on the unified approach to the classification of defects in continuum-based
analysis of the defect self-distortions. Defects of various dimensionality including point …