[HTML][HTML] Historical review of computer simulation of radiation effects in materials

K Nordlund - Journal of Nuclear Materials, 2019 - Elsevier
In this Article, I review the development of computer simulation techniques for studying
radiation effects in materials from 1946 until 2018. These developments were often closely …

Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

Y Zhang, H Xue, E Zarkadoula, R Sachan… - Current Opinion in Solid …, 2017 - Elsevier
Understanding energy dissipation processes in electronic/atomic subsystems and
subsequent non-equilibrium defect evolution is a long-standing challenge in materials …

[HTML][HTML] Molecular dynamics simulations of high-dose damage production and defect evolution in tungsten

F Granberg, J Byggmästar, K Nordlund - Journal of Nuclear Materials, 2021 - Elsevier
Tungsten has been chosen as the plasma-facing wall material in fusion reactors, due to its
high density and melting point. The wall material will not only be sputtered at the surface, but …

[HTML][HTML] Unveiling the radiation-induced defect production and damage evolution in tungsten using multi-energy Rutherford backscattering spectroscopy in channeling …

S Markelj, X Jin, F Djurabekova, J Zavašnik… - Acta Materialia, 2024 - Elsevier
Radiation-induced defect production in tungsten was studied by a combination of
experimental and simulation methods. The analysis of structural defects was performed …

Unravelling the secrets of the resistance of GaN to strongly ionising radiation

MC Sequeira, JG Mattei, H Vazquez… - Communications …, 2021 - nature.com
GaN is the most promising upgrade to the traditional Si-based radiation-hard technologies.
However, the underlying mechanisms driving its resistance are unclear, especially for …

A review of surface damage/microstructures and their effects on hydrogen/helium retention in tungsten

YG Li, QR Zheng, LM Wei, CG Zhang, Z Zeng - Tungsten, 2020 - Springer
The change in surface damage/microstructures and its effects on the hydrogen (H)
isotope/helium (He) dynamic behavior are the key factors for investigating issues of tungsten …

[HTML][HTML] Extracting defect profiles in ion-implanted GaN from ion channeling

A Caçador, P Jóźwik, S Magalhães, JG Marques… - Materials Science in …, 2023 - Elsevier
Ion implantation offers many advantages for material doping, namely a meticulous control
over various parameters such as implantation area, fluence, energy, etc. However, ion …

Irradiation-induced damage evolution in concentrated Ni-based alloys

G Velişa, MW Ullah, H Xue, K Jin, ML Crespillo, H Bei… - Acta Materialia, 2017 - Elsevier
Understanding the effects of chemical complexity from the number, type and concentration of
alloying elements in single-phase concentred solid-solution alloys (SP-CSAs) on defect …

Recent progress on understanding the temperature-dependent irradiation resistance ranking among NiFe, NiCoCr, and NiCoFeCr alloys: A review

G Velişa, F Granberg, E Levo, Y Zhou, Z Fan… - Journal of Materials …, 2023 - Springer
Systematic temperature-effects investigations on damage evolution in ion-irradiated Ni-
based concentrated solid-solution alloys (CSAs) are pivotal to provide reliance on their use …

[HTML][HTML] Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

C Xu, CL Senaratne, RJ Culbertson… - Journal of Applied …, 2017 - pubs.aip.org
The compositional dependence of the lattice parameter in Ge 1-y Sn y alloys has been
determined from combined X-ray diffraction and Rutherford Backscattering (RBS) …