Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
J Li, N Gao, D Cai, W Lin, K Huang, S Li… - Light: Science & …, 2021 - nature.com
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based
on (0001)-oriented Al x Ga 1− x N multiple quantum wells (MQWs) has been studied by …
on (0001)-oriented Al x Ga 1− x N multiple quantum wells (MQWs) has been studied by …
High performance and high yield sub-240 nm AlN: GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates
J Nicholls, L Anderson, W Lee, JJS Ahn… - Applied Physics …, 2023 - pubs.aip.org
We develop ultraviolet (UV) light emitting diodes (LEDs) that operate in the sub-240 nm (far
UVC) regime. The traditional limitations of high Al content AlGaN—the low light extraction …
UVC) regime. The traditional limitations of high Al content AlGaN—the low light extraction …
Progress and challenges of AlGaN Schottky diodes grown on AlN substrates
Quasi-vertical, high Al composition AlGaN Schottky diodes with breakdown voltages up to
500 V were grown on high quality AlN single crystal substrates. Diodes exhibited a~ 10 6 …
500 V were grown on high quality AlN single crystal substrates. Diodes exhibited a~ 10 6 …
Excitons in (Al, Ga) N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings
A Ibanez, N Nikitskiy, A Zaiter, P Valvin… - Journal of Applied …, 2023 - pubs.aip.org
The luminescence efficiency of AlxGa1− xN quantum dots (QDs) and quantum wells (QWs),
buried in AlN cladding layers and emitting in the ultraviolet range between 234 and 310 nm …
buried in AlN cladding layers and emitting in the ultraviolet range between 234 and 310 nm …
[图书][B] Handbook of GaN semiconductor materials and devices
This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
Band gap bowing and optical polarization switching in Al Ga N alloys
We present a detailed theoretical study of the band gap bowing of wurtzite AlGaN alloys
over the full composition range. Our theoretical framework is based on an atomistic tight …
over the full composition range. Our theoretical framework is based on an atomistic tight …
[HTML][HTML] Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
Since the band ordering in AlGaN has a profound effect on the performance of UVC light
emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the …
emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the …
[HTML][HTML] Tuning photonic crystal fabrication by nanosphere lithography and surface treatment of AlGaN-based ultraviolet light-emitting diodes
Photonic crystal processing was performed using nanosphere lithography as a low-cost
procedure to enhance the quantum efficiency of AlGaN-based ultraviolet light emitting …
procedure to enhance the quantum efficiency of AlGaN-based ultraviolet light emitting …
Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
AA Roble, SK Patra, F Massabuau, M Frentrup… - Scientific Reports, 2019 - nature.com
We report on a combined theoretical and experimental study of the impact of alloy
fluctuations and Coulomb effects on the electronic and optical properties of c-plane …
fluctuations and Coulomb effects on the electronic and optical properties of c-plane …