Ferroelectric materials have remained one of the major focal points of condensed matter
physics and materials science for over 50 years. In the last 20 years, the development of …

A comprehensive review of recent advances in solution processing and growth of metal‐
oxide thin films for electronic and photonic devices is presented, with specific focus on …

Ferroelectricity in functional materials remains one of the most fascinating areas of modern
science in the past several decades. In the last several years, the rapid development of …

Ferroelectricity on the nanoscale has been the subject of much fascination in condensed-
matter physics for over half a century. In recent years, multiple reports claiming …

Recent observations of unusual ferroelectricity in thin films of HfO 2 and related materials
has attracted broad interest to the materials and led to the emergence of a number of …

Ferroelectric memory devices based on 2D materials are gaining popularity in research due
to having non-volatile data storage, low power consumption and improved endurance and …

Thin‐film ferroelectric of HfO2‐based has gained broad interest for non‐volatile memories.
The traditional theory with respect to doped hafnium oxide is based on the polycrystalline …

Far-infrared and terahertz spectroscopy of ferroelectric soft and central modes in thin films
on substrates is reviewed. In addition to classical displacive proper ferroelectrics, also …

Porous gC 3 N 4 and supported porous gC 3 N 4 were fabricated for the first time by a
simple strategy using pretreated melamine as a raw material and pretreated quartz rod as a …

Relaxor property plays a key role in determining energy storage performance of dielectric
capacitor. The usual method to improve relaxor property is to form substitutional solid …