III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …

Being direct wide bandgap, III‐nitride (III‐N) semiconductors have many applications in
optoelectronics, including light‐emitting diodes, lasers, detectors, photocatalysis, etc …

Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …

GaN-based microdisk laser on Si can be adopted as an efficient on-chip laser source for Si
photonics. However, most of the reported microdisk lasers are integrated on Si (111), which …

The photoinduced entropy of InGaN/GaN pin nanowires was investigated using temperature-
dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in …

GaN-based microring lasers grown on Si are promising candidates for compact and efficient
light sources in Si-based optoelectronic integration and optical interconnect due to their …

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for
III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range …

The conventional GaN microdisk laser adopts an undercut structure for the optical
confinement, which provides poor overlap between the whispering gallery modes and the …

The main interest of group-III-nitride nanophotonic circuits is the integration of active
structures and laser sources. A photonic platform of group-III-nitride microdisk lasers …

Silicon photonics has been longing for an efficient on-chip light source that is electrically
driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes …