We have seen the significant influence of the information revolution brought about by
optoelectronic sensing technologies on human civilization over the last few decades …

We propose and demonstrate the use of a β-(Al x Ga 1–x) 2 O 3 capping layer to achieve
increased breakdown voltage, V BR, and V BR 2/R ON figure of merit in β-Ga 2 O 3 Schottky …

In this work, bulk Czochralski-grown single crystals of 10 mol.% Al 2 O 3 alloyed β-Ga 2 O 3—
monoclinic 10% AGO or β-(Al 0.1 Ga 0.9) 2 O 3—are obtained, which show+ 0.20 eV …

Twins are common defects in β-Ga2O3 crystals that affect the development of large single
crystal substrates. To investigate the generation and development of twins, we grew a (100) …

Bulk crystals of β-Ga 2 O 3 were successfully grown by the edge-defined film-fed growth
method. The crystalline quality of the obtained crystals was analyzed by the method of x-ray …

This study confirms that the symmetric plane of (001) with respect to the twin boundary in β-
Ga 2 O 3 is the (1¯ 01), and it has been systematically characterized. X-ray diffraction has …

High-quality β-(AlxGa1− x) 2O3 thin films are fabricated through face-to-face annealing on
sapphire substrates covered with epitaxial Ga2O3. Al atoms during high-temperature …

In this article, we report on fabricating thin solid films of gallium oxide by the spray-pyrolysis
method. This method allows obtaining uniform thin films more easily compared with other sol …

When n-type β-Ga 2 O 3 crystals with large thickness are grown by edge-defined film-fed
growth (EFG), fusing often occurs, due to the massive release of latent heat of crystallization …

With the future of electronics focusing on reduced packing size and efficient high-power
applications, ultrawide bandgap semiconductors such as β-Ga 2 O 3 are at the forefront of …