As a result of developing wide bandgap InGaP double hetero structure tunnel junction for
sub-cell interconnection, InGaAs middle cell lattice-matched to Ge substrate, and InGaP-Ge …

Solar cell efficiency can be associated with the ability of the solar cell to produce the
maximum amount of electricity from a light energy source. There are many uses of multi …

Improvements in optoelectrical properties of GaAsN are demonstrated by chemical beam
epitaxy (CBE) growth on high-step-density GaAs substrates. The step density at the growing …

GaAsN thin films were grown by chemical beam epitaxy (CBE) with monomethylhydrazine
(MMHy) as a N source. Processes that determine the N composition in the GaAsN thin films …

Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth.
However, low-temperature growth increases C incorporation in the films, which degrades …

The local vibration modes of N–H related defects in GaAsN are studied using isotopes.
When GaAsN is grown through chemical beam epitaxy (CBE) using triethylgallium/tris …

The electrical behavior of nitrogen–hydrogen (N–H) complexes and carbon (C) atoms in
GaAsN films grown by the chemical beam epitaxy (CBE) method have been studied by …

From the engineering perspective, the CVD system is essentially a ''molecular
scale''manufacturing facility. Just like any factory, the production rate is determined by the …

The amount of residual H in the GaAsN film grown by chemical beam epitaxy (CBE) can be
decreased by flow rate modulation growth. Many H atoms in the films grown by CBE exist as …

The effects of nitrogen (N) distribution on the electrical properties of GaAsN films were
evaluated by intentionally changing the N distribution using atomic layer epitaxy (ALE) and …