thin-film transistors (TFTs) for highly sensitive biosensing applications: a review

A Kumar, AK Goyal, N Gupta - … Journal of Solid State Science and …, 2020 - iopscience.iop.org
This review manuscript presents Thin-Film Transistors (TFTs) for various highly sensitive
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …

Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature

A Kumar, MM Tripathi, R Chaujar - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, reliability issues of In2O5Sn (indium-tin oxide: a transparent material)
transparent gate recessed channel (TGRC)-MOSFET has been analyzed by considering the …

Optimization of high-k and gate metal workfunction for improved analog and intermodulation performance of Gate Stack (GS)-GEWE-SiNW MOSFET

N Gupta, R Chaujar - Superlattices and Microstructures, 2016 - Elsevier
This work optimizes the gate engineering scheme (both gate stack and gate metal
workfunction engineering) of Stacked Gate (SG) Gate Electrode Workfunction Engineered …

Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance

M Sharma, B Kumar, R Chaujar - Materials Science and Engineering: B, 2023 - Elsevier
High electron-mobility transistors (HEMTs) based on III-nitrides are well-known as ideal
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …

Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications

A Kumar, MM Tripathi, R Chaujar - Superlattices and Microstructures, 2018 - Elsevier
In this work, a comprehensive analog and RF performance of a novel Black Phosphorus-
Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm …

Highly efficient tin oxide‐based colloidal lead sulfide quantum dot solar cell

A Kumar, P Gahlaut, N Gupta - Energy Storage, 2023 - Wiley Online Library
This work presents the assessment of tin oxide (SnO2) electron transport layer (ETL)‐based
quantum dot solar cell for improved efficiency (> 20%). The proposed solar cell consists of a …

Simulation of perovskite solar cell employing ZnO as electron transport layer (ETL) for improved efficiency

A Kumar, U Gupta, R Chaujar, MM Tripathi… - Materials Today …, 2021 - Elsevier
Solar energy is quite a reliable and popular source of energy and the recent development in
this field has provided a boost for further technological development. Perovskite solar cells …

Investigation of parasitic capacitances of In2O5Sn gate electrode recessed channel MOSFET for ULSI switching applications

A Kumar, MM Tripathi, R Chaujar - Microsystem Technologies, 2017 - Springer
This work discusses the capacitance–voltage (C–V) analysis and frequency dependent
capacitance of In 2 O 5 Sn (Tin Oxide) gate electrode Recessed Channel (TGRC) MOSFET …

Effect of trench depth and gate length shrinking assessment on the analog and linearity performance of TGRC-MOSFET

A Kumar - Superlattices and Microstructures, 2017 - Elsevier
This paper discusses the impact of trench depth (Negative Junction Depth (NJD)) and gate
length (LG) shrinking on analog and linearity performance of Transparent Gate Recessed …

Ultralow-power dielectric-modulated nanogap-embedded sub-20-nm TGRC-MOSFET for biosensing applications

A Kumar, MM Tripathi, R Chaujar - Journal of computational electronics, 2018 - Springer
This work examines a transparent gate recessed channel (TGRC) metal–oxide–
semiconductor field-effect transistor (MOSFET) for biosensing, including a nanogap cavity …