This review article provides the state-of-art research and developments of the rectenna
device and its two main components–the antenna and the rectifier. Furthermore, the history …

A systematic study of Schottky barriers fabricated on (010) β-Ga 2 O 3 substrates is reported.
Schottky barrier heights (SBHs) and current transport modes were analyzed using a …

Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

Serving as the “eyes” and “ears” of the Internet of Things, optical and acoustic sensors are
the fundamental components in hardware systems. Nowadays, mainstream hardware …

For the first time, the IVT dataset of a Schottky diode has been accurately modelled,
parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch …

The vertical bulk (drain-bulk) current (I db) properties of analogous AlGaN/GaN hetero-
structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS …

Understanding the physics and technology of Schottky contacts to Silicon Carbide is
important, for both academic and industrial researchers. In fact, the rectifying contact is a tool …

In this paper, we investigate the electrical evolution of tungsten (W) and tungsten carbide
(WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing …

Abstract Ni/n-type 6H-SiC/Ni Schottky barrier diodes (SBDs) have been prepared by the DC
magnetron sputtering deposition technique. Their current-voltage characteristics (IV) have …

Si/4H-SiC heterojunction diodes (HJDs) are fabricated by applying Ar+ inverse sputter
etching (ISE) of the 4H-SiC substrate prior to Si deposition. A subsequent annealing step …