Gallium oxide nanostructures: A review of synthesis, properties and applications
Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
[HTML][HTML] Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
AY Polyakov, VI Nikolaev, EB Yakimov, F Ren… - Journal of Vacuum …, 2022 - pubs.aip.org
A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
Impact of 100 MeV high-energy proton irradiation on β-Ga2O3 solar-blind photodetector: Oxygen vacancies formation and resistance switching effect
MM Chang, DY Guo, XL Zhong, FB Zhang… - Journal of Applied …, 2022 - pubs.aip.org
β-Ga 2 O 3 based solar-blind photodetectors have strong radiation hardness and great
potential applications in Earth's space environment due to the large bandgap and high bond …
potential applications in Earth's space environment due to the large bandgap and high bond …
[HTML][HTML] Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3
Atomic scale details of the formation of point defects and their evolution to phase
transformation in silicon (Si) implanted β-Ga 2 O 3 were studied using high resolution …
transformation in silicon (Si) implanted β-Ga 2 O 3 were studied using high resolution …
Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs
AI Titov, KV Karabeshkin, AI Struchkov, VI Nikolaev… - Vacuum, 2022 - Elsevier
The mechanisms of ion-induced defect formation and physical characteristics promoting
radiation tolerance of wide and ultra-wide bandgap semiconductors are not well-studied and …
radiation tolerance of wide and ultra-wide bandgap semiconductors are not well-studied and …
Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3
J García-Fernández, SB Kjeldby, PD Nguyen… - Applied Physics …, 2022 - pubs.aip.org
Ion implantation induced phase transformation and the crystal structure of a series of ion
implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution …
implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution …
[HTML][HTML] Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3
β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor, holding a tremendous
potential for power-switching devices for next-generation high power electronics. The …
potential for power-switching devices for next-generation high power electronics. The …
[HTML][HTML] Diffusion of dopants and impurities in β-Ga2O3
The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
Control and understanding of metal contacts to β-Ga2O3 single crystals: a review
H Kim - SN Applied Sciences, 2022 - Springer
Abstract Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …