In recent years, with the further ministration of the semiconductor device in integrated
circuits, power consumption and data transmission bandwidth have become insurmountable …

Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …

Serving as the electrical to optical converter, the on-chip silicon light source is an
indispensable component of silicon photonic technologies and has long been pursued …

Tensile strain is a widely discussed means for inducing a direct bandgap in Ge for the
realization of a semiconductor laser compatible with Si microelectronics. We present a top …

The optical properties of germanium can be tailored by combining strain engineering and n-
type doping. In this paper, we review the recent progress that has been reported in the study …

In this work we study, using experiments and theoretical modeling, the mechanical and
optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the …

Strain engineering is a powerful approach in micro-and optoelectronics to enhance carrier
mobility, tune the bandgap of heterostructures, or break lattice symmetry for nonlinear optics …

We have analyzed the strain distribution and the photoluminescence in Ge microstructures
fabricated by means of a Si-CMOS compatible method. The tensile strain in the Ge …

We show that a strong tensile strain can be applied to germanium microdisks using silicon
nitride stressors. The transferred strain allows one to control the direct band gap emission …

Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …