This paper shows that various models of electron transport in semiconductors that have
been previously proposed in the literature can be connected one with each other by the …

The Boltzmann transport equation is commonly considered to be the best semi-classical
description of carrier transport in semiconductors, providing precise information about the …

A spherical harmonics expansion method of the Boltzmann Transport Equation (BTE) is
applied to investigate the carrier energy spectrum of a two-dimensional MOSFET up to 3 eV …

A detailed analysis of silicon-carbide (SiC) metal–oxide–semiconductor field-effect-transistor
(MOSFET) physics is performed. Measurements of current–voltage characteristics are taken …

We study optimally doped Bi-2212 (T c= 96 K) using femtosecond time-and angle-resolved
photoelectron spectroscopy. Energy-resolved population lifetimes are extracted and …

This paper rst reviews some basic facts about electron transport in semiconductor materials.
Then, it develops several macroscopic models from the di usion approximation of the …

The Spherical-Harmonics solution of the Boltzmann Transport Equation (BTE) in silicon is
generalized to the full-band case for both electrons and holes. The relevant scattering …

The Boltzmann equation for transport in semiconductors is projected onto spherical
harmonics in such a way that the resultant balance equations for the coefficients of the …

The numerical properties of a deterministic Boltzmann equation solver based on a spherical
harmonics expansion of the distribution function are analyzed and improved. A fully coupled …

Rapid advances in integrated circuit technology are pushing the size of semiconductor
devices into the deep submicron range. The traditional simulation approaches based on …