The objective of this study was to develop a Computational Fluid Dynamics (CFD) 3D model
for an industrial application, to investigate how surface roughness affected pressure drop …

Online condition monitoring of power electronics relies on high-accuracy and high-
bandwidth junction temperature information. One promising sensing approach is the …

This paper presents a multi-stage gate driver based on a switched gate resistor topology for
paralleled silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors …

This article proposes a new estimation process of the actual maximum junction temperature
in multichip silicon carbide (SiC) MOSFET power modules. Temperature-sensitive electrical …

Monitoring the junction temperature of power semi-conductor devices is a requirement for
degradation monitoring and predictive maintenance of power-electronic converters and …

In this paper, an intelligent gate driver for parallel-connected silicon carbide (SiC) metal-
oxide-semiconductor field-effect transistors (MOSFETs) is presented. Commercial gate …

Compensating Asymmetries of Parallel-Connected SiC MOSFETs Using Intelligent Gate Drivers
Page 1 Aachener Beiträge des ISEA 0 100 200 300 400 500 20 40 60 Time in s T emp erature …

With fast switching wide-bandgap semiconductors, power module design becomes
increasingly important. Parasitic inductances influence the switching transient and thus the …

In this work, a gate driver is presented that allows to balance the temperature of parallel-
connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors …

The objective of this study was to develop a Computational Fluid Dynamics (CFD) 3D model
for an industrial application, to investigate how surface roughness affected pressure drop …