The rising demand for energy has accelerated the search for clean and renewable sources
and newer approaches towards efficient energy management. One of the most promising …

With its outstanding physical properties, single‐crystal diamond is the material of choice for
future power electronics and quantum devices. The later application field is based on the …

Transmission electron microscopy (TEM) coupled with electron energy loss spectroscopy
(EELS), and first principles calculations of EEL spectra were utilized to elucidate the …

Dislocations in a homoepitaxial diamond film grown by chemical vapor deposition (CVD)
were characterized by confocal Raman imaging. The diamond film was grown on a high …

In the synthesis of epitaxial heterostructures with appreciable lattice misfit, dislocations
represent a crucial linear defect. Since device quality is typically deteriorated by their …

Boron doped diamonds (BDD) with boron concentration above 10 19 at./cm 3, grown under
conditions of high isostatic pressure by the temperature gradient method, were studied by …

The methane concentration dependence of the plasma gas phase on surface morphology
and boron incorporation in single crystal, boron-doped diamond deposition is …

Compositionally complex oxides (CCOs) are an emerging class of materials encompassing
high entropy and entropy stabilized oxides. These promising advanced materials leverage …

We present site-coincident imaging of a high dislocation density boron-doped chemical
vapor deposition-grown homoepitaxial (001) diamond film using electron channeling …

In the present study, systematic correlations were revealed between the propagation
direction of threading dislocations, the off-axis growth conditions, and the stress state of …