Growth of wurtzite Sc x Al 1− x N (x< 0.23) by plasma-assisted molecular-beam epitaxy on c-
plane GaN at high temperatures significantly alters the extracted lattice constants of the …

Wurtzite Sc x Al 1− x N/GaN (x= 0.13–0.18) multi-quantum wells grown by molecular beam
epitaxy on c-plane GaN are found to exhibit remarkably strong and narrow near-infrared …

Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-
matching composition for wurtzite $ Sc_xAl_ {1-x} N $ layers on (0001) GaN to be x= 0.14+ …

Research that seeks to understand and develop the growth of III-nitride materials by
molecular beam epitaxy (MBE) is beneficial to a broad range of the device community. MBE …

III-Nitride materials are promising for a wide range of important applications. However,
certain challenges exist in their use related to technological obstacles such as lack of native …

InAlN thin films and InAlN/GaN heterostructures have been intensively studied over recent
years due to their applications in a variety of devices, including high electron mobility …