Progress in BiFeO 3-based heterostructures: materials, properties and applications

L Yin, W Mi - Nanoscale, 2020 - pubs.rsc.org
BiFeO3-based heterostructures have attracted much attention for potential applications due
to their room-temperature multiferroic properties, proper band gaps and ultrahigh …

Charge transfer driven emergent phenomena in oxide heterostructures

H Chen, A Millis - Journal of Physics: Condensed Matter, 2017 - iopscience.iop.org
Complex oxides exhibit many intriguing phenomena, including metal-insulator transition,
ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature …

[HTML][HTML] Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces

MN Grisolia, J Varignon, G Sanchez-Santolino… - Nature physics, 2016 - nature.com
At interfaces between conventional materials, band bending and alignment are classically
controlled by differences in electrochemical potential. Applying this concept to oxides in …

Band alignment and charge transfer in complex oxide interfaces

Z Zhong, P Hansmann - Physical Review X, 2017 - APS
The synthesis of transition metal heterostructures is currently one of the most vivid fields in
the design of novel functional materials. In this paper, we propose a simple scheme to …

Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Y Chen, F Trier, T Kasama, DV Christensen… - Nano Letters, 2015 - ACS Publications
The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures
provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG …

Strain‐Engineered Metal‐to‐Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon

B Chen, N Gauquelin, D Jannis, DM Cunha… - Advanced …, 2020 - Wiley Online Library
Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of
multifunctional oxides into the mainstream semiconductor electronics. However, oxide …

Engineered Mott ground state in a LaTiO3+δ/LaNiO3 heterostructure

Y Cao, X Liu, M Kareev, D Choudhury… - Nature …, 2016 - nature.com
In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures
based on LaNiO3 have inspired a wealth of exciting experimental and theoretical results …

Hole‐Trapping‐Induced Stabilization of Ni4 + in SrNiO3/LaFeO3 Superlattices

L Wang, Z Yang, ME Bowden, JW Freeland… - Advanced …, 2020 - Wiley Online Library
Creating new functionality in materials containing transition metals is predicated on the
ability to control the associated charge states. For a given transition metal, there is an upper …

Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO3 Photocathodes

MI Díez‐García, R Gómez - ChemSusChem, 2017 - Wiley Online Library
The development of tandem devices for water photosplitting requires the preparation of
photocathodic materials based on earth‐abundant elements that show long‐term stability in …

Probing surfaces and interfaces in complex oxide films via in situ X-ray photoelectron spectroscopy

S Thapa, R Paudel, MD Blanchet… - Journal of Materials …, 2021 - Springer
Emergent behavior at oxide interfaces has driven research in complex oxide films for the
past 20 years. Interfaces have been engineered for applications in spintronics, topological …