Abstract Chemical Mechanical Polishing (CMP) is a widely used surface treatment process
in integrated circuit manufacturing for global planarization of the surface layers of various …

Chemical mechanical planarization (CMP) is a vital process for smoothing and polishing the
surfaces of various material layers in the semiconductor device fabrication. CMP slurries …

It becomes very critical for yield enhancement to accomplish defect free global planarization
during barrier CMP. Conventional commercial barrier chemical mechanical polishing (CMP) …

Chemical mechanical planarization (CMP) is a high-precision and complex manufacturing
process during which materials are removed with chemical and mechanical actions to …

Chemical mechanical planarization is a process of achieving planar surfaces in the
semiconductor manufacturing industry. The planarization of a surface is achieved by …

The formation of a ring-shaped residue after the chemical mechanical polishing (CMP)
process of a copper (Cu) interconnect was investigated. The chemical composition of the …

The goal of chemical mechanical polishing (CMP) is to achieve a flat and smooth surface for
through silicon via (TSV) application. In order to obtain high efficiency and high quality …

在铜互连阻挡层化学机械抛光(CMP) 过程中, 由于工艺和材料等因素会产生划伤和沾污等缺陷
问题, 造成器件失效, 良率降低及潜在可靠性等问题. 研究了抛光液中活性剂及超滤工艺对CMP …

The reliability of oxygen plasma-etched ruthenium/copper thin film stacks was studied under
constant-current density and constant-voltage stress conditions. The thin ruthenium served …

Decoupling the key interfacial mechanisms (chemical and mechanical) present during
CuCMP is critical to the development of slurry/pad consumable sets to reduce defectivity at …