In recent years, ultraviolet (UV) photodetectors (PDs) have received much attention in the
various field of research due to wide range of industrial, military, biological and …

Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a
wide range of civil and military applications. Because of its wide band gap, low cost, strong …

Zinc oxide has emerged as an attractive material for various applications in electronics,
optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at …

ZnO is a wide‐bandgap (3.37 eV at room temperature) oxide semiconductor that is attractive
for its great potential in short‐wavelength optoelectronic devices, in which high quality films …

The photodetectors based on the wide bandgap semiconductor (WBS)/Si heterojunction
have attracted more and more attention in recent years due to their excellent photoelectric …

A Schottky UV photodetector based on graphene/ZnO: Al nanorod-array-film (AZNF)
structure has been fabricated. Different from the previously reported graphene/ZnO …

Silicon-based p–n junction photodetectors (PDs) play an essential role in optoelectronic
applications for photosensing due to their outstanding compatibility with well-developed …

Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of
visible and infrared photodetectors are needed for commercial applications. n-Type ZnO …

The realization of micro/nanosized electrically pumped laser diodes, which show unique
advantages including minimized footprint, ultralow threshold, energy-efficiency, and single …

It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs),
which are one of the basic building blocks of solid state UV optoelectronic devices. In the …