AlGaN devices and growth of device structures
KA Jones, TP Chow, M Wraback, M Shatalov… - Journal of Materials …, 2015 - Springer
The structure of a number of GaN/AlGaN devices and their associated material growth and
processing issues are examined in some detail, and extrapolations are made to predict what …
processing issues are examined in some detail, and extrapolations are made to predict what …
Room temperature electrically injected polariton laser
Room temperature electrically pumped inversionless polariton lasing is observed from a
bulk GaN-based microcavity diode. The low nonlinear threshold for polariton lasing occurs …
bulk GaN-based microcavity diode. The low nonlinear threshold for polariton lasing occurs …
Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy
The progress in the growth of nitride-based laser diodes (LDs) made by plasma-assisted
molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN …
molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN …
Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors
We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire
heterostructures and their implementation as high electron mobility transistors (HEMTs). The …
heterostructures and their implementation as high electron mobility transistors (HEMTs). The …
Negative differential resistance in dislocation-free GaN∕ AlGaN double-barrier diodes grown on bulk GaN
S Golka, C Pflügl, W Schrenk, G Strasser… - Applied physics …, 2006 - pubs.aip.org
Double-barrier GaN resonant tunneling diodes with AlGaN barriers were fabricated on bulk
(0001) single-crystal GaN substrates. Layers were grown using molecular-beam epitaxy with …
(0001) single-crystal GaN substrates. Layers were grown using molecular-beam epitaxy with …
Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density
Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime
of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10 …
of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10 …
AlGaN/GaN micro-Hall effect devices for simultaneous current and temperature measurements from line currents
GaN/Al 0.20 Ga 0.80 N/GaN heterostructures were grown by molecular beam epitaxy and
fabricated into micro-Hall effect sensors for the purpose of simultaneous current and …
fabricated into micro-Hall effect sensors for the purpose of simultaneous current and …
The roles of threading dislocations on electrical properties of AlGaN/GaN heterostructure grown by MBE
The role played by different types of threading dislocations (TDs) on the electrical properties
of AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy (MBE) …
of AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy (MBE) …
An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity
Creating seamless heterostructures that exhibit the quantum Hall effect and
superconductivity is highly desirable for future electronics based on topological quantum …
superconductivity is highly desirable for future electronics based on topological quantum …
SiC and GaN power semiconductor devices
TK Gachovska, JL Hudgins - Power electronics handbook, 2018 - Elsevier
Wide bandgap semiconductors such as SiC and GaN have drawn a lot of attention in power
applications due to their superior material properties such as high critical electric field …
applications due to their superior material properties such as high critical electric field …