Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …

Silicon photonics for synergistic electronic–photonic integration has achieved remarkable
progress in the past two decades. Active photonic devices, including lasers, modulators, and …

Germanium is becoming an important material for mid-infrared photonics, but the modulation
mechanisms in Ge are not yet well understood. In this paper, we estimate the size of free …

The optical properties of germanium can be tailored by combining strain engineering and n-
type doping. In this paper, we review the recent progress that has been reported in the study …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms
of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries …

We analyze the optical gain of tensile-strained, n-germanium (n-Ge) material taking
bandgap narrowing (BGN) for heavily doped Ge into account. Both the direct bandgap and …

Compact optical interconnects require efficient lasers and modulators compatible with
silicon. Ab initio modeling of Ge 1− x C x (x= 0.78%) using density functional theory with …

Ge is considered to be one of the most promising materials for realizing full monolithic
integration of a light source on a silicon (Si) photonic chip. Tensile-strain is required to …

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier
dynamics of Ge involving both direct (Γ) and indirect (L) valleys. Here, we report a large …