Standards for the characterization of endurance in resistive switching devices

M Lanza, R Waser, D Ielmini, JJ Yang, L Goux… - ACS …, 2021 - ACS Publications
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …

In-memory computing with emerging nonvolatile memory devices

C Cheng, PJ Tiw, Y Cai, X Yan, Y Yang… - Science China Information …, 2021 - Springer
The von Neumann bottleneck and memory wall have posed fundamental limitations in
latency and energy consumption of modern computers based on von Neumann architecture …

A computing-in-memory macro based on three-dimensional resistive random-access memory

Q Huo, Y Yang, Y Wang, D Lei, X Fu, Q Ren, X Xu… - Nature …, 2022 - nature.com
Non-volatile computing-in-memory macros that are based on two-dimensional arrays of
memristors are of use in the development of artificial intelligence edge devices. Scaling such …

A collective study on modeling and simulation of resistive random access memory

D Panda, PP Sahu, TY Tseng - Nanoscale research letters, 2018 - Springer
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …

Resistive random access memory for future information processing system

H Wu, XH Wang, B Gao, N Deng, Z Lu… - Proceedings of the …, 2017 - ieeexplore.ieee.org
Resistive random access memory (RRAM) is regarded as one of the most promising
emerging memory technologies for next-generation embedded, standalone nonvolatile …

Merging the interface: Power, area and accuracy co-optimization for rram crossbar-based mixed-signal computing system

B Li, L Xia, P Gu, Y Wang, H Yang - Proceedings of the 52nd annual …, 2015 - dl.acm.org
The invention of resistive-switching random access memory (RRAM) devices and RRAM
crossbar-based computing system (RCS) demonstrate a promising solution for better …

Design of ternary neural network with 3-D vertical RRAM array

Z Li, PY Chen, H Xu, S Yu - IEEE Transactions on Electron …, 2017 - ieeexplore.ieee.org
Recently, 2-D cross-point array of resistive random access memory (RRAM) has been
proposed for implementing the weighted sum and weight update operations to accelerate …

3D resistive RAM cell design for high-density storage class memory—a review

B Hudec, CW Hsu, IT Wang, WL Lai, CC Chang… - Science China …, 2016 - Springer
In this article, we comprehensively review recent progress in the ReRAM cell technology for
3D integration focusing on a material/device level. First we briefly mention pioneering work …

Design tradeoffs of vertical RRAM-based 3-D cross-point array

PY Chen, Z Li, S Yu - IEEE Transactions on Very Large Scale …, 2016 - ieeexplore.ieee.org
The 3-D integration of resistive switching random access memory (RRAM) array is attractive
for low-cost and high-density nonvolatile memory application. In this paper, the design …

Cross-point resistive memory: Nonideal properties and solutions

C Wang, D Feng, W Tong, J Liu, Z Li, J Chang… - ACM Transactions on …, 2019 - dl.acm.org
Emerging computational resistive memory is promising to overcome the challenges of
scalability and energy efficiency that DRAM faces and also break through the memory wall …