Lanthanide rare earth oxide thin film as an alternative gate oxide
An ultrathin gate oxide is needed for future nanoscale technology due to the density of
integrated circuits will increase exponentially every two to three years as predicted by …
integrated circuits will increase exponentially every two to three years as predicted by …
Synthesis of graphene/zirconium oxide nanocomposite photocatalyst for the removal of rhodamineB dye from aqueous environment
BR Singh, M Shoeb, W Khan, AH Naqvi - Journal of Alloys and Compounds, 2015 - Elsevier
In this study, we have synthesized graphene/zirconium oxide nanocomposites (Gr@ ZrO 2-
NC) by employing an alkaline method using green sodium hydroxide, as a reductant. The …
NC) by employing an alkaline method using green sodium hydroxide, as a reductant. The …
Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate
Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has
been carried out in oxygen ambient at various temperatures (600° C to 900° C) for 15 min …
been carried out in oxygen ambient at various temperatures (600° C to 900° C) for 15 min …
Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations
Growth of 150 nm Sm 2 O 3 films by sputtered pure samarium metal film on silicon
substrates and followed by thermal oxidation process in oxygen ambient at 700° C through …
substrates and followed by thermal oxidation process in oxygen ambient at 700° C through …
Metal-oxide-semiconductor characteristics of Zr-oxynitride thin film on 4H-SiC substrate
Abstract Sputtered Zr on 4H-SiC substrate and followed by simultaneous oxidation and
nitridation in nitrous oxide ambient at various temperatures (400–900 C) for 15 min have …
nitridation in nitrous oxide ambient at various temperatures (400–900 C) for 15 min have …
Development of ZrF4-containing CsF–AlF3 flux for brazing 5052 aluminium alloy with Zn–Al filler metal
B Xiao, D Wang, F Cheng, Y Wang - Materials & Design, 2016 - Elsevier
Intermediate-temperature brazing of the 5052 aluminium alloy was conducted using Zn–xAl
(x= 8, 15, and 22 wt.%) filler metals with a ZrF 4-containing CsF–AlF 3 flux developed in this …
(x= 8, 15, and 22 wt.%) filler metals with a ZrF 4-containing CsF–AlF 3 flux developed in this …
Microstructural and optical properties of ZrON/Si thin films
ZrON/Si (100) layer structure formation has been produced by oxidation/nitridation of
sputtered Zr metal in N2O/Ar ambient at 500–900° C. Micromorphology and structural …
sputtered Zr metal in N2O/Ar ambient at 500–900° C. Micromorphology and structural …
Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation
A systematic study of chemical, structural and electrical properties of Sm 2 O 3 gate stack
has been carried out for RF sputtered Sm thin film on Ge substrate followed by thermal …
has been carried out for RF sputtered Sm thin film on Ge substrate followed by thermal …
Effect of oxidation temperature on physical and electrical properties of ZrO2 thin-film gate oxide on Ge substrate
The effects of oxidation temperatures on metal-oxide-semiconductor characteristics of
sputtered zirconium thin films on germanium systematically investigated in an oxygen …
sputtered zirconium thin films on germanium systematically investigated in an oxygen …
Electrical characteristics of oxidized/nitrided Zr thin film on Si
In this work, electrical properties of simultaneously oxidized and nitrided sputtered Zr thin
film on n-type Si via N 2 O gas were systematically investigated and charge conduction …
film on n-type Si via N 2 O gas were systematically investigated and charge conduction …