We present the first review of the current state of the literature on electronic properties and
phase transitions in TlX and TlMX 2 (M= Ga, In; X= Se, S, Te) compounds. These …

Single crystals of the layered compound TlInS2 were grown by direct synthesis of their
constituents. The spectral and optical parameters have been determined using …

The effect of electrons on the surface, Raman spectra, structure and phase transition in a
TlInS 2 single crystal was studied. Irradiation of TlInS 2 with electrons with an energy of 2 …

Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe2 were
performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase …

The spectral distribution of photocurrent (PC) of TlGaSe 2 single crystals in the range of
wavelengths between 500 nm and 700 nm possesses a single maximum at 2.04 eV …

We have studied experimentally the acoustic wave velocities for TlInS_2 crystals and
determined all components of their elastic stiffness and compliance tensors. It has been …

The results from the investigation of optical absorption in TlGaSe 2 layered bulk
semiconductor in the wavelength range of 400–900 nm between the temperatures of 19 K …

The sample thickness effect on the optical properties of TlInS 2 layered crystals has been
investigated at room temperature. The absorption coefficient of the samples calculated from …

In nominally undoped layered TlGaSe2 crystals the trapping centers have been investigated
by photo‐induced current transient spectroscopy (PICTS). Five acceptor and donor traps …

The temperature dependences of the permittivity, dark current, and current-voltage
characteristics of the layered ferroelectric semiconductor TlGaSe 2 were measured over the …