Observation of light-phase-sensitive photoemission from a metal
We demonstrate that multiphoton-induced photoelectron emission from a gold surface
caused by low-energy (unamplified) 4-fs, 750-nm laser pulses is sensitive to the timing of …
caused by low-energy (unamplified) 4-fs, 750-nm laser pulses is sensitive to the timing of …
Carrier-Envelope Phase-Controlled Quantum Interference<? format?> of Injected Photocurrents in Semiconductors
We demonstrate quantum interference control of injected photocurrents in a semiconductor
using the phase stabilized pulse train from a mode-locked Ti: sapphire laser. Measurement …
using the phase stabilized pulse train from a mode-locked Ti: sapphire laser. Measurement …
Optical injection processes in semiconductors
J Rioux, JE Sipe - Physica E: Low-dimensional Systems and …, 2012 - Elsevier
We present a theoretical review and band structure calculations of optical injection
processes in semiconductors. The study of these processes in bulk materials provides a …
processes in semiconductors. The study of these processes in bulk materials provides a …
Direct measurement and analysis of the carrier-envelope phase in light pulses approaching the single-cycle regime
We demonstrate a solid-state device capable of providing direct information about the carrier-
envelope (CE) phase of ultrashort (4 fs) laser pulses. The measurement is based on multi …
envelope (CE) phase of ultrashort (4 fs) laser pulses. The measurement is based on multi …
Solid-state carrier-envelope phase stabilization via quantum interference control of injected photocurrents
We demonstrate carrier-envelope phase stabilization of a mode-locked Ti: sapphire laser by
use of quantum interference control of injected photocurrents in a semiconductor. No …
use of quantum interference control of injected photocurrents in a semiconductor. No …
Nonlinear Current Injection in Hexagonal Boron Nitride using Linearly Polarized Light in a Deeply Off‐Resonant Regime
Light‐induced electron dynamics in monolayer hexagonal boron nitride is theoretically
investigated under the influence of two‐color linearly‐polarized laser fields at frequencies ω …
investigated under the influence of two‐color linearly‐polarized laser fields at frequencies ω …
Excitonic effects on the two-color coherent control of interband transitions in bulk semiconductors
RDR Bhat, JE Sipe - Physical Review B—Condensed Matter and Materials …, 2005 - APS
Quantum interference between one-and two-photon absorption pathways allows coherent
control of interband transitions in unbiased bulk semiconductors; carrier population, carrier …
control of interband transitions in unbiased bulk semiconductors; carrier population, carrier …
Mid-infrared optical spin injection and coherent control
G Fettu, JE Sipe, O Moutanabbir - Physical Review B, 2023 - APS
The optical injection of charge and spin currents is investigated in Ge 1− x Sn x
semiconductors as a function of Sn content. These emerging silicon-compatible materials …
semiconductors as a function of Sn content. These emerging silicon-compatible materials …
Characterization of carrier-envelope phase-sensitive photocurrent injection in a semiconductor
We characterize the manner in which the carrier-envelope phase of ultrashort pulses can
control quantum interference of injected photocurrents in low-temperature-grown gallium …
control quantum interference of injected photocurrents in low-temperature-grown gallium …
Femtosecond quantum interference control of electrical currents in GaAs: Signatures beyond the perturbative limit
E Sternemann, T Jostmeier, C Ruppert, HT Duc… - Physical Review B …, 2013 - APS
We present a comprehensive experimental and theoretical study of the power dependence
of coherently controlled currents in bulk GaAs. Currents are optically induced by phase …
of coherently controlled currents in bulk GaAs. Currents are optically induced by phase …