Observation of light-phase-sensitive photoemission from a metal

A Apolonski, P Dombi, GG Paulus, M Kakehata… - Physical review …, 2004 - APS
We demonstrate that multiphoton-induced photoelectron emission from a gold surface
caused by low-energy (unamplified) 4-fs, 750-nm laser pulses is sensitive to the timing of …

Carrier-Envelope Phase-Controlled Quantum Interference<? format?> of Injected Photocurrents in Semiconductors

TM Fortier, PA Roos, DJ Jones, ST Cundiff, RDR Bhat… - Physical review …, 2004 - APS
We demonstrate quantum interference control of injected photocurrents in a semiconductor
using the phase stabilized pulse train from a mode-locked Ti: sapphire laser. Measurement …

Optical injection processes in semiconductors

J Rioux, JE Sipe - Physica E: Low-dimensional Systems and …, 2012 - Elsevier
We present a theoretical review and band structure calculations of optical injection
processes in semiconductors. The study of these processes in bulk materials provides a …

Direct measurement and analysis of the carrier-envelope phase in light pulses approaching the single-cycle regime

P Dombi, A Apolonski, C Lemell, GG Paulus… - New Journal of …, 2004 - iopscience.iop.org
We demonstrate a solid-state device capable of providing direct information about the carrier-
envelope (CE) phase of ultrashort (4 fs) laser pulses. The measurement is based on multi …

Solid-state carrier-envelope phase stabilization via quantum interference control of injected photocurrents

PA Roos, X Li, RP Smith, JA Pipis, TM Fortier… - Optics letters, 2005 - opg.optica.org
We demonstrate carrier-envelope phase stabilization of a mode-locked Ti: sapphire laser by
use of quantum interference control of injected photocurrents in a semiconductor. No …

Nonlinear Current Injection in Hexagonal Boron Nitride using Linearly Polarized Light in a Deeply Off‐Resonant Regime

W Mao, A Rubio, SA Sato - Advanced Optical Materials, 2024 - Wiley Online Library
Light‐induced electron dynamics in monolayer hexagonal boron nitride is theoretically
investigated under the influence of two‐color linearly‐polarized laser fields at frequencies ω …

Excitonic effects on the two-color coherent control of interband transitions in bulk semiconductors

RDR Bhat, JE Sipe - Physical Review B—Condensed Matter and Materials …, 2005 - APS
Quantum interference between one-and two-photon absorption pathways allows coherent
control of interband transitions in unbiased bulk semiconductors; carrier population, carrier …

Mid-infrared optical spin injection and coherent control

G Fettu, JE Sipe, O Moutanabbir - Physical Review B, 2023 - APS
The optical injection of charge and spin currents is investigated in Ge 1− x Sn x
semiconductors as a function of Sn content. These emerging silicon-compatible materials …

Characterization of carrier-envelope phase-sensitive photocurrent injection in a semiconductor

PA Roos, X Li, JA Pipis, TM Fortier, ST Cundiff… - JOSA B, 2005 - opg.optica.org
We characterize the manner in which the carrier-envelope phase of ultrashort pulses can
control quantum interference of injected photocurrents in low-temperature-grown gallium …

Femtosecond quantum interference control of electrical currents in GaAs: Signatures beyond the perturbative limit

E Sternemann, T Jostmeier, C Ruppert, HT Duc… - Physical Review B …, 2013 - APS
We present a comprehensive experimental and theoretical study of the power dependence
of coherently controlled currents in bulk GaAs. Currents are optically induced by phase …