Novel InGaSb/AlP quantum dots for non-volatile memories
DS Abramkin, VV Atuchin - Nanomaterials, 2022 - mdpi.com
Non-volatile memories based on the flash architecture with self-assembled III–V quantum
dots (SAQDs) used as a floating gate are one of the prospective directions for universal …
dots (SAQDs) used as a floating gate are one of the prospective directions for universal …
Suppressing the effect of the wetting layer through AlAs capping in InAs/GaAs QD structures for solar cells applications
Recently, thin AlAs capping layers (CLs) on InAs quantum dot solar cells (QDSCs) have
been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although …
been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although …
[HTML][HTML] Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
Abstract Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been
proposed as suitable structures to be implemented in the optimal design of monolithic multi …
proposed as suitable structures to be implemented in the optimal design of monolithic multi …
Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications
GaAsSbN dilute nitrides are potential candidates for integration in high-performance multi-
junction solar cells due to the bandgap tunability in the 1.0–1.15 eV range and the possibility …
junction solar cells due to the bandgap tunability in the 1.0–1.15 eV range and the possibility …
Thermal transport through Ge-rich Ge/Si superlattices grown on Ge (0 0 1)
L Thumfart, J Carrete, B Vermeersch… - Journal of Physics D …, 2017 - iopscience.iop.org
The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured
using both time-domain thermoreflectance and the differential 3${\rm\omega} $ method. The …
using both time-domain thermoreflectance and the differential 3${\rm\omega} $ method. The …
Analysis of the modified optical properties and band structure of GaAs1− xSbx-capped InAs/GaAs quantum dots
JM Ulloa, JM Llorens, M Del Moral, M Bozkurt… - Journal of Applied …, 2012 - pubs.aip.org
The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a
thin GaAs 1− x Sb x layer is analyzed in terms of the band structure. To do so, the size …
thin GaAs 1− x Sb x layer is analyzed in terms of the band structure. To do so, the size …
Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
A procedure to quantitatively analyse the relationship between the wetting layer (WL) and
the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the …
the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the …
General route for the decomposition of InAs quantum dots during the capping process
The effect of the capping process on the morphology of InAs/GaAs quantum dots (QDs) by
using different GaAs-based capping layers (CLs), ranging from strain reduction layers to …
using different GaAs-based capping layers (CLs), ranging from strain reduction layers to …
InAs quantum dot morphology after capping with In, N, Sb alloyed thin films
Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs
quantum dots (QDs) has become common practice in the last decade. Traditionally, the main …
quantum dots (QDs) has become common practice in the last decade. Traditionally, the main …
Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies
InAsBi dilute alloys are potential new candidates for the improvement of infrared
optoelectronic devices such as photodetectors or lasers. In this work, InAsBi/InAs …
optoelectronic devices such as photodetectors or lasers. In this work, InAsBi/InAs …