Memristive crossbar arrays for storage and computing applications

H Li, S Wang, X Zhang, W Wang… - Advanced Intelligent …, 2021 - Wiley Online Library
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …

Recent advances of volatile memristors: Devices, mechanisms, and applications

R Wang, JQ Yang, JY Mao, ZP Wang… - Advanced Intelligent …, 2020 - Wiley Online Library
Due to the rapid development of artificial intelligence (AI) and internet of things (IoTs),
neuromorphic computing and hardware security are becoming more and more important …

Elemental electrical switch enabling phase segregation–free operation

J Shen, S Jia, N Shi, Q Ge, T Gotoh, S Lv, Q Liu… - Science, 2021 - science.org
Nonvolatile phase-change memory has been successfully commercialized, but further
density scaling below 10 nanometers requires compositionally and structurally …

[HTML][HTML] Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

Y Li, ZC Zhang, J Li, XD Chen, Y Kong… - Nature …, 2022 - nature.com
The explosion in demand for massive data processing and storage requires revolutionary
memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and …

[HTML][HTML] Ultrahigh drive current and large selectivity in GeS selector

S Jia, H Li, T Gotoh, C Longeaud, B Zhang… - Nature …, 2020 - nature.com
Selector devices are indispensable components of large-scale nonvolatile memory and
neuromorphic array systems. Besides the conventional silicon transistor, two-terminal ovonic …

Prospects and applications of volatile memristors

D Kim, B Jeon, Y Lee, D Kim, Y Cho, S Kim - Applied Physics Letters, 2022 - pubs.aip.org
Since research on artificial intelligence has begun receiving much attention, interest in
efficient hardware that can process a complex and large amount of information has also …

[HTML][HTML] Three Musketeers: demonstration of multilevel memory, selector, and synaptic behaviors from an Ag-GeTe based chalcogenide material

MJ Yu, KR Son, AC Khot, DY Kang, JH Sung… - Journal of Materials …, 2021 - Elsevier
Functional neuronal computing systems that support information diversification require high-
density memory with selector devices to reduce leakage current in cross-point architectures …

Advances in resistive switching based memory devices

S Munjal, N Khare - Journal of Physics D: Applied Physics, 2019 - iopscience.iop.org
Among the emerging memories, resistive switching (RS) based resistive random-access
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …

[HTML][HTML] Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

A Bafekry, B Mortazavi, M Faraji, M Shahrokhi… - Scientific Reports, 2021 - nature.com
Abstract Sb 2 S 3 and Sb 2 Se 3 are well-known layered bulk structures with weak van der
Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic …

Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

M Zhu, K Ren, Z Song - Mrs Bulletin, 2019 - cambridge.org
High-current switching performance of ovonic threshold switching (OTS) selectors have
successfully enabled the commercialization of high-density three-dimensional (3D) …