ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor
SJ Lim, S Kwon, H Kim - Thin Solid Films, 2008 - Elsevier
Recently, the application of ZnO thin films as an active channel layer of transparent thin film
transistor (TFT) has become of great interest. In this study, we deposited ZnO thin films by …
transistor (TFT) has become of great interest. In this study, we deposited ZnO thin films by …
Resistive and capacitive measurement of nano-structured gas sensors
With the advent of industrial renaissance and world population exploration, atmospheric
pollution is being elevated beyond the predicted roadmap. Development of effective and …
pollution is being elevated beyond the predicted roadmap. Development of effective and …
Hydrogen sensitivity of ZnO p–n homojunctions
SK Hazra, S Basu - Sensors and Actuators B: Chemical, 2006 - Elsevier
The sensor response of p-ZnO/n-ZnO structures was studied to 500 and 1000ppm hydrogen
at 300 and 400° C. The p–n junctions behaved like tunnel diodes and were insensitive to …
at 300 and 400° C. The p–n junctions behaved like tunnel diodes and were insensitive to …
Influence of spray pyrolysis deposition parameters on the optoelectronic properties of WO3 thin films
The electrochromic (EC) properties of tungsten oxide (WO3), such as coloration efficiency,
cyclic durability and reversibility strongly depend on the structural and morphological …
cyclic durability and reversibility strongly depend on the structural and morphological …
Deposition of Na–N dual acceptor doped p-type ZnO thin films and fabrication of p-ZnO:(Na, N)/n-ZnO: Eu homojunction
R Swapna, MCS Kumar - Materials Science and Engineering: B, 2013 - Elsevier
Sodium and nitrogen dual acceptor doped p-type ZnO (ZnO:(Na, N)) films have been
prepared by spray pyrolysis technique at a substrate temperature of 623 K. The ZnO:(Na, N) …
prepared by spray pyrolysis technique at a substrate temperature of 623 K. The ZnO:(Na, N) …
[HTML][HTML] Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies
DJ Winarski, W Anwand, A Wagner, P Saadatkia… - Aip Advances, 2016 - pubs.aip.org
Undoped and Ga-and Al-doped ZnO films were synthesized using sol-gel and spin coating
methods and characterized by X-ray diffraction, high-resolution scanning electron …
methods and characterized by X-ray diffraction, high-resolution scanning electron …
Lithium-related states as deep electron traps in ZnO
O Lopatiuk, L Chernyak, A Osinsky, JQ Xie - Applied Physics Letters, 2005 - pubs.aip.org
Carrier trapping in Li-doped ZnO was studied using Electron Beam Induced Current
technique, as well as cathodoluminescence spectroscopy and persistent photoconductivity …
technique, as well as cathodoluminescence spectroscopy and persistent photoconductivity …
Electrical characterization of ZnO-based homojunctions
Electrical characteristics have been studied for ZnO pn and pin homojunctions, with
optimization of device structures for improved performance. Capacitance-voltage …
optimization of device structures for improved performance. Capacitance-voltage …
ZnO coaxial nanorod Homojunction UV light-emitting diodes prepared by aqueous solution method.
The fabrication of a p-shell/n-core coaxial nanorod ZnO homojunction light-emitting diode by
inexpensive solution method is demonstrated. The p-type conductivity of the ZnO shell …
inexpensive solution method is demonstrated. The p-type conductivity of the ZnO shell …
Hydrides as materials for semiconductor electronics
SZ Karazhanov, AG Ulyashin, P Vajeeston… - Philosophical …, 2008 - Taylor & Francis
Systematic studies using density functional theory have shown that some hydrides possess
the features of semiconductors. These features include larger fundamental band gap, well …
the features of semiconductors. These features include larger fundamental band gap, well …