The development of low-cost, compact, high-power and broadband superluminescent light-
emitting diodes is an important research subject for a wide range of applications. We …

GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …

Discovery of self-organized epitaxial quantum dots (QDs) resulted in multiple breakthroughs
in the field of physics of zero-dimensional heterostructures and allowed the advancement of …

Hybrid quantum well–dots (QWD) nanostructures have been formed by deposition of 7–10
monolayers of In 0.4 Ga 0.6 As on a vicinal GaAs surface using metal–organic chemical …

Owing to their high integration and functionality, nanometer-scale optoelectronic devices
based on III-V semiconductor materials are emerging as an enabling technology for fiber …

The current state of the field of semiconductor lasers operating in the spectral range near 1.3
μm and with an active region represented by an array of self-organized quantum dots is …

This paper theoretically investigates the optical noise characteristics of the simultaneous
ground-state (GS) and excited-state (ES) lasing quantum dot lasers. The optical noise …

To fully exploit the potential advantages of ideal quantum dots (QDs)(ie full 3D carrier
confinement), elimination of the wetting layer and a uniform monomodal QD size distribution …

The use of the excited state quantum dot lasers for high speed direct modulation is proposed
and demonstrated. A direct comparison of lasers utilizing the ground state and excited state …

This review examines axisymmetric-cavity quantum-dot microlasers whose emission
spectrum is determined by whispering-gallery modes. We describe the possible designs …