ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing

B Sun, G Zhou, L Sun, H Zhao, Y Chen, F Yang… - Nanoscale …, 2021 - pubs.rsc.org
The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …

Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

C Song, B Cui, F Li, X Zhou, F Pan - Progress in Materials Science, 2017 - Elsevier
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

Ferroelectric tunnel junctions for information storage and processing

V Garcia, M Bibes - Nature communications, 2014 - nature.com
Computer memory that is non-volatile and therefore able to retain its information even when
switched off enables computers that do not need to be booted up. One of the technologies …

Magnetoelectric devices for spintronics

S Fusil, V Garcia, A Barthélémy… - Annual Review of …, 2014 - annualreviews.org
The control of magnetism by electric fields is an important goal for the future development of
low-power spintronics. Various approaches have been proposed on the basis of either …

Reversible electrical switching of spin polarization in multiferroic tunnel junctions

D Pantel, S Goetze, D Hesse, M Alexe - Nature materials, 2012 - nature.com
Spin-polarized transport in ferromagnetic tunnel junctions, characterized by tunnel
magnetoresistance, has already been proven to have great potential for application in the …

Electric field control of magnetism in multiferroic heterostructures

CAF Vaz - Journal of Physics: Condensed Matter, 2012 - iopscience.iop.org
We review the recent developments in the electric field control of magnetism in multiferroic
heterostructures, which consist of heterogeneous materials systems where a …

Roadmap on magnetoelectric materials and devices

X Liang, A Matyushov, P Hayes, V Schell… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
The possibility of tuning the magnetic properties of materials with voltage (converse
magnetoelectricity) or generating electric voltage with magnetic fields (direct …

Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

SV Kalinin, Y Kim, DD Fong… - Reports on Progress in …, 2018 - iopscience.iop.org
For over 70 years, ferroelectric materials have been one of the central research topics for
condensed matter physics and material science, an interest driven both by fundamental …

Electric control of magnetism at the Fe/BaTiO3 interface

G Radaelli, D Petti, E Plekhanov, I Fina, P Torelli… - Nature …, 2014 - nature.com
Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic
information in spintronic devices. For the prototypical Fe/BaTiO3 system, only tiny changes …

Ferroelectric nanoparticles, wires and tubes: synthesis, characterisation and applications

J Varghese, RW Whatmore, JD Holmes - Journal of Materials …, 2013 - pubs.rsc.org
Nanostructured materials are central to the evolution of future electronics and information
technologies. Ferroelectrics have already been established as a dominant branch in the …