Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy
Growth of wurtzite Sc x Al 1− x N (x< 0.23) by plasma-assisted molecular-beam epitaxy on c-
plane GaN at high temperatures significantly alters the extracted lattice constants of the …
plane GaN at high temperatures significantly alters the extracted lattice constants of the …
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
E Kano, K Kataoka, J Uzuhashi, K Chokawa… - Journal of Applied …, 2022 - pubs.aip.org
We carried out atomic-scale observations of Mg-ion-implanted GaN by transmission electron
microscopy (TEM) and atom probe tomography (APT) to clarify the crystallographic …
microscopy (TEM) and atom probe tomography (APT) to clarify the crystallographic …
[HTML][HTML] An in-situ approach for preparing atom probe tomography specimens by xenon plasma-focussed ion beam
A method for the rapid preparation of atom probe tomography (APT) needles using a xenon
plasma-focussed ion beam (FIB) instrument is presented and demonstrated on a test sample …
plasma-focussed ion beam (FIB) instrument is presented and demonstrated on a test sample …
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
Atom probe tomography (APT) has been used to characterize the distribution of In atoms
within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate …
within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate …
Barriers to carrier transport in multiple quantum well nitride-based -plane green light emitting diodes
C Lynsky, AI Alhassan, G Lheureux, B Bonef… - Physical Review …, 2020 - APS
The presence of alloy disorder in III-nitride materials has been demonstrated to play a
significant role in device performance through effects such as carrier localization and carrier …
significant role in device performance through effects such as carrier localization and carrier …
Compositional accuracy of atom probe tomography measurements in GaN: Impact of experimental parameters and multiple evaporation events
A systematic study of the biases occurring in the measurement of the composition of GaN by
Atom Probe Tomography was carried out, in which the role of surface electric field and laser …
Atom Probe Tomography was carried out, in which the role of surface electric field and laser …
Atom probe tomography of nitride semiconductors
Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride
semiconductors, despite the challenges involved in achieving controlled field evaporation. In …
semiconductors, despite the challenges involved in achieving controlled field evaporation. In …
Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography
B Bonef, M Catalano, C Lund, SP Denbaars… - Applied Physics …, 2017 - pubs.aip.org
Energy dispersive X-ray spectroscopy (EDX) in scanning transmission electron microscopy
and atom probe tomography are used to characterize N-polar InGaN/GaN quantum wells at …
and atom probe tomography are used to characterize N-polar InGaN/GaN quantum wells at …
[HTML][HTML] Correlating laser energy with compositional and atomic-level information of oxides in atom probe tomography
Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical
accuracy and sensitivity with sub-nanometer spatial resolution. There is an increasing …
accuracy and sensitivity with sub-nanometer spatial resolution. There is an increasing …
Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography
Laser assisted atom probe tomography is used to characterize the alloy distribution in
BGaN. The effect of the evaporation conditions applied on the atom probe specimens on the …
BGaN. The effect of the evaporation conditions applied on the atom probe specimens on the …