Micro light-emitting diode (microLED) technology is expected to be used in next-generation
displays and other applications due to its many advantages. This paper categorizes …

MicroLED technology is expected to be the technology of choice for next-generation
displays. Its advantages in various applications are reviewed. The challenges of microLED …

We report on diffusion-driven and excitation-dependent carrier recombination rate in
multiple InGaN/GaN quantum wells by using photoluminescence, light-induced absorption …

InGaN light emitting diodes (LEDs) with multiple thin double-heterostrucutre (DH) active
regions separated by thin and low energy barriers were investigated to shed light on …

Time-resolved optical techniques of photoluminescence (PL), light-induced transient grating
(LITG), and differential transmission spectroscopy were used to investigate carrier dynamics …

This work employs femtosecond transient absorption spectroscopy to investigate the
ultrafast carrier dynamics of bound states in In 0.14 Ga 0.86 N/GaN quantum wells. The …

Abstract [eng] The thesis is dedicated to investigation of carrier dynamics in InN, InGaN, and
GaAsBi heterostructures by using light-induced transient gratings and differential …

We present a comprehensive study of photoexcited carrier dynamics in differently grown
InGaN/InGaN multiple quantum well (MQW) structures, modified by insertion of a wide …

Enhancement of internal quantum efficiency (IQE) in InGaN quantum wells by insertion of a
superlattice interlayer and applying the pulsed growth regime is investigated by a set of time …

This thesis explores radiative efficiencies and recombination dynamics in InGaN-based
heterostructures and their applications as active regions in blue light emitters and …