Electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT: MEH-PPV/Al organic devices: Comparison study
The electrical and photoresponse properties of the p-Si/P3HT/Al and p-Si/P3HT: MEH-
PPV/Al organic devices have been investigated by current–voltage and capacitance …
PPV/Al organic devices have been investigated by current–voltage and capacitance …
Performance prediction of current-voltage characteristics of Schottky diodes at low temperatures using artificial intelligence
T Güzel, AB Çolak - Microelectronics Reliability, 2023 - Elsevier
Schottky diodes are still one of the most important elements of electronics. Therefore,
investigating the properties of diodes is very important in determining their usage areas. In …
investigating the properties of diodes is very important in determining their usage areas. In …
Evidence for the double distribution of barrier heights in Schottky diodes from IVT measurements
The current-voltage (IV) characteristics of palladium silicide-based Schottky diodes on n-
type silicon have been measured over a wide temperature range (66-300 K). Their analysis …
type silicon have been measured over a wide temperature range (66-300 K). Their analysis …
On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes
The current–voltage characteristics of Pd2Si based Schottky diodes on both n‐and p‐type
silicon measured over a wide temperature range (52–295 K) have been interpreted on the …
silicon measured over a wide temperature range (52–295 K) have been interpreted on the …
Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures
The forward current-voltage (I–V) characteristics of Pd 2 Si/n-Si (100) Schottky barrier diodes
are shown to follow the Thermionic Emission-Diffusion (TED) mechanism in the temperature …
are shown to follow the Thermionic Emission-Diffusion (TED) mechanism in the temperature …
Effects of barrier height distribution on the behavior of a Schottky diode
The current–voltage characteristics of a Schottky diode are simulated numerically using the
thermionic emission-diffusion mechanism and considering a Gaussian distribution of barrier …
thermionic emission-diffusion mechanism and considering a Gaussian distribution of barrier …
A self-powered broadband photodetector based on an n-Si (111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency
Y Zhang, T Ji, W Zhang, G Guan, Q Ren, K Xu… - Journal of Materials …, 2017 - pubs.rsc.org
A self-powered high-performance broadband photodetector was fabricated, based on n-Si
(111)/p-NiO heterojunctions consisting of single-crystal NiO nanosheets, via a facile …
(111)/p-NiO heterojunctions consisting of single-crystal NiO nanosheets, via a facile …
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs)
were studied in the temperature range of 80–400K. The investigation of various SDs …
were studied in the temperature range of 80–400K. The investigation of various SDs …
The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
The forward bias current-voltage (IV) characteristics of Au/n-Si Schottky barrier diodes
(SBDs) with Zn doped poly (vinyl alcohol)(PVA: Zn) interfacial layer have been investigated …
(SBDs) with Zn doped poly (vinyl alcohol)(PVA: Zn) interfacial layer have been investigated …
ZnSnN2 Schottky barrier solar cells
F Ye, RT Hong, CS He, ZC Zhao, YZ Xie… - Materials Science and …, 2024 - Elsevier
The electron density of ZnSnN 2 fabricated by different deposition methods is usually much
higher than its conduction band density of states and this hinders its device application. By …
higher than its conduction band density of states and this hinders its device application. By …