Modelling of nanoparticles: approaches to morphology and evolution

AS Barnard - Reports on Progress in Physics, 2010 - iopscience.iop.org
As we learn more about the physics, chemistry and engineering of materials at the
nanoscale, we find that the development of a complete understanding is not (in general) …

Size, shape, and strain dependence of the factor in self-assembled In(Ga)As quantum dots

T Nakaoka, T Saito, J Tatebayashi, Y Arakawa - Physical Review B …, 2004 - APS
We have investigated Zeeman splitting in single self-assembled InAs and InGaAs quantum
dots experimentally and theoretically. By measuring photoluminescence from single dots, in …

Computing with spins: from classical to quantum computing

S Bandyopadhyay - Superlattices and Microstructures, 2005 - Elsevier
This article reviews the use of single electron spins to compute. In classical computing
schemes, a binary bit is represented by the bistable spin polarization of a single electron …

Spin-3 2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings

D Csontos, P Brusheim, U Zülicke, HQ Xu - Physical Review B—Condensed …, 2009 - APS
We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in
hole quantum wires. The spin-3 2 character of the topmost bulk-valence-band states results …

Изучение термодинамических и структурных характеристик наночастиц металлов в процессах плавления и кристаллизации: теория и компьютерное …

НЮ Сдобняков, ДН Соколов - 2018 - elibrary.ru
Монография является результатом обобщения исследований, выполнявшихся в рамках
ряда научных проектов Тверского государственного университета, на кафедре …

Stark shift in a Frost-Musulin quantum dot: Analytical solution

R Khordad - Physica B: Condensed Matter, 2024 - Elsevier
In the research, a quantum dot (QD) under an external magnetic field is theoretically
investigated. The confining potential applied to the charge carriers is chosen as the Frost …

Tuning of -factor in self-assembled In(Ga)As quantum dots through strain engineering

T Nakaoka, T Saito, J Tatebayashi, S Hirose… - Physical Review B …, 2005 - APS
We have investigated the effect of strain on the g-factors of self-assembled In (Ga) As dots by
single-dot spectroscopy and an eight-band effective mass calculation taking into account the …

Luminescent core-shell nanostructures of silicon and silicon oxide: Nanodots and nanorods

M Ray, TS Basu, A Jana, NR Bandyopadhyay… - Journal of Applied …, 2010 - pubs.aip.org
We report synthesis and luminescent characteristics of core-shell nanostructures of silicon
and silicon oxide having two different morphologies—spherical (nanodot) and rodlike …

Method for full Bloch sphere control of a localized spin via a single electrical gate

J Pingenot, CE Pryor, ME Flatté - Applied Physics Letters, 2008 - pubs.aip.org
We calculate the dependence on an applied electric field of the g tensor of a single electron
in a self-assembled In As∕ Ga As quantum dot. We identify dot sizes and shapes for which …

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

MV Durnev, MM Glazov, EL Ivchenko, M Jo… - Physical Review B …, 2013 - APS
We present a microscopic theory of the magnetic field induced mixing of heavy-hole
states±3/2 in GaAs droplet dots grown on (111) A Ga-rich surfaces. The proposed theoretical …