Recommended methods to study resistive switching devices
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
Review of semiconductor flash memory devices for material and process issues
Abstract Vertically integrated NAND (V‐NAND) flash memory is the main data storage in
modern handheld electronic devices, widening its share even in the data centers where …
modern handheld electronic devices, widening its share even in the data centers where …
Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators
Memristor-integrated passive crossbar arrays (CAs) could potentially accelerate neural
network (NN) computations, but studies on these devices are limited to software-based …
network (NN) computations, but studies on these devices are limited to software-based …
Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture
Coexistence of negative differential resistance (NDR) and resistive switching (RS) memory
is observed using a Ag| TiOx| F‐doped‐SnO2 memory cell at room temperature. Unlike other …
is observed using a Ag| TiOx| F‐doped‐SnO2 memory cell at room temperature. Unlike other …
Multi-state memristors and their applications: An overview
Memristors show great potential for being integrated into CMOS technology and provide
new approaches for designing computing-in-memory (CIM) systems, brain-inspired …
new approaches for designing computing-in-memory (CIM) systems, brain-inspired …
What will come after V‐NAND—vertical resistive switching memory?
The NAND flash memory serves as the key enabler of the flourishing of portable handheld
information devices, such as the cellular phone. The recent upsurge in the sales of vertical …
information devices, such as the cellular phone. The recent upsurge in the sales of vertical …
Picosecond multilevel resistive switching in tantalum oxide thin films
U Böttger, M von Witzleben, V Havel, K Fleck, V Rana… - Scientific reports, 2020 - nature.com
The increasing demand for high-density data storage leads to an increasing interest in novel
memory concepts with high scalability and the opportunity of storing multiple bits in one cell …
memory concepts with high scalability and the opportunity of storing multiple bits in one cell …
Self-rectifying resistive memory in passive crossbar arrays
Conventional computing architectures are poor suited to the unique workload demands of
deep learning, which has led to a surge in interest in memory-centric computing. Herein, a …
deep learning, which has led to a surge in interest in memory-centric computing. Herein, a …
Toward reliable multi-level operation in RRAM arrays: Improving post-algorithm stability and assessing endurance/data retention
E Perez, C Zambelli, MK Mahadevaiah… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays
is currently a challenging task due to several threats like the post-algorithm instability …
is currently a challenging task due to several threats like the post-algorithm instability …
Overwhelming coexistence of negative differential resistance effect and RRAM
An electronic cell that possesses synchronously multi-physical properties is of great
importance in the applications of multifunctional electronic devices. In this study, an …
importance in the applications of multifunctional electronic devices. In this study, an …