Modulation methods for direct and indirect matrix converters: A review
Matrix converters (MCs) allow the implementation of single-stage AC/AC power conversion
systems (PCS) with inherent bidirectional power flow capability. By avoiding the typical DC …
systems (PCS) with inherent bidirectional power flow capability. By avoiding the typical DC …
Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors
TP Chow, I Omura, M Higashiwaki… - … on Electron Devices, 2017 - ieeexplore.ieee.org
We evaluate and compare the performance and potential of GaAs and of wide and extreme
bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power …
bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power …
[HTML][HTML] GaN power converter and high-side IC substrate issues on Si, pn junction, or SOI
The lateral GaN power semiconductor technology enables monolithic integration of
complete power converter topologies such as half-bridges, multi-phase and multi-level …
complete power converter topologies such as half-bridges, multi-phase and multi-level …
Monolithic bidirectional power transistors
Today's global megatrends—loosely defined as long-term trends that shape societies and
economies worldwide—include, eg, the transition to a fully renewable energy supply and the …
economies worldwide—include, eg, the transition to a fully renewable energy supply and the …
[图书][B] Wide bandgap power semiconductor packaging: materials, components, and reliability
K Suganuma - 2018 - books.google.com
Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability
addresses the key challenges that WBG power semiconductors face during integration …
addresses the key challenges that WBG power semiconductors face during integration …
矩阵变换器-永磁同步电机系统
夏长亮， 阎彦 - 电工技术学报, 2015 - dgjsxb.ces-transaction.com
矩阵变换器-永磁同步电机系统具有结构紧凑, 能量双向流动以及网侧功率因数调整灵活等特点,
是实现高端装备动力部件高控制精度, 高功率密度以及高运行效率的有效方案 …
是实现高端装备动力部件高控制精度, 高功率密度以及高运行效率的有效方案 …
Hybrid SVPWM scheme to minimize the common-mode voltage frequency and amplitude in voltage source inverter drives
In this paper, a hybrid space vector pulsewidth modulation synthesis is proposed to lower
the frequency and amplitude of the common-mode voltage (CMV). The conventional space …
the frequency and amplitude of the common-mode voltage (CMV). The conventional space …
Gate control scheme of monolithically integrated normally OFF bidirectional 600-V GaN HFETs
M Wolf, O Hilt, J Würfl - IEEE Transactions on Electron Devices, 2018 - ieeexplore.ieee.org
The design and gate-control management of monolithically integrated bidirectional normally
OFF GaN-HFET-based switches are presented. Unidirectional 600-V p-GaN-gate HFETs are …
OFF GaN-HFET-based switches are presented. Unidirectional 600-V p-GaN-gate HFETs are …
Three-Phase Motor Inverter and Current Sensing GaN Power IC
A three-phase GaN-based motor inverter IC with three integrated phase current mirror
sensors (sense-FETs or sense-HEMTs, 1200: 1 ratio), a temperature sensor, and an …
sensors (sense-FETs or sense-HEMTs, 1200: 1 ratio), a temperature sensor, and an …
[HTML][HTML] GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion
We report GaN high-electron-mobility transistors (HEMTs) with a thick (7.7 µm) GaN buffer
on a Czochralski low resistivity Si (LRS) substrate. The GaN HEMTs exhibit high …
on a Czochralski low resistivity Si (LRS) substrate. The GaN HEMTs exhibit high …