Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on
(001) silicon wafers. The observed matching face relationship is FeSi2 (100)/Si (001), with …

The formation of iron silicides has been monitored by a variety of surface sensitive
techniques such as Auger electron spectroscopy, electron energy loss spectroscopy, and …

Epitaxially aligned films of β‐FeSi2 were grown on (001) silicon by reactive deposition
epitaxy (RDE), molecular‐beam epitaxy (MBE), and solid‐phase epitaxy (SPE). Although the …

Semiconducting silicides epitaxially grown on silicon may be promising materials for
integrated optoelectronic devices. The structure and the physical properties of FeSi 2 are …

We have studied the growth of Fe on Si (100) 2× 1 and the formation of FeSi and β-FeSi 2 by
solid-phase epitaxy and reactive-deposition epitaxy. The silicide films were characterized by …

Iron silicide films have been grown epitaxially on Si (001) by solid phase epitaxy (SPE) in
UHV. The grown silicide films have been investigated in geometric and electronic structure …

Nucleation dependence of reactively deposited CoSi 2/S i (001) morphology and structure
were analyzed in situ by scanning tunneling microscopy and surface electron diffraction. On …

High-quality thin films of β-FeSi 2 have been obtained by annealing at 600 C Fe layers of
thicknesses 50–100 Å deposited in ultrahigh vacuum on clean Si (111) substrates. The …

The growth of iron silicides on Si (100) by solid phase epitaxy has been investigated by
photoelectron spectroscopies. The different iron silicide phases appearing and their stability …

The epitaxial relationships of β-FeSi 2 films grown on Si (111) by solid-phase epitaxy and
reactive-deposition epitaxy were investigated by x-ray diffraction. The β (101) and β (110) …