Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for
next generation information storage, leading to great performance and fabrication-friendly …

Nanofabrication techniques for achieving dimensional control at the nanometer scale are
generally equipment-intensive and time-consuming. The use of energetic beams of …

All engineers could benefit from at least one course in Reliability Physics & Engineering. It is
very likely that, starting with your very first engineering position, you will be asked—how long …

The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

In this paper it is demonstrated in a wide stress field range that breakdown in thin oxide
layers occurs as soon as a critical density of neutral electron traps in the oxide is reached. It …

In this paper we review the subject of oxide breakdown (BD), focusing our attention on the
case of the gate dielectrics of interest for current Si microelectronics, ie, Si oxides or …

An overview of the evolution of transistor parameters under negative bias temperature
instability stress conditions commonly observed in p-MOSFETs in recent technologies is …

Time-Dependent Dielectric Breakdown (TDDB) models for silica (SiO2)-based dielectrics
are revisited so as to better understand the ability of each model to explain quantitatively the …