Hybrid semiconductor–superconductor nanowires are promising candidates as quantum
information processing devices. The need for scalability and complex designs calls for the …

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor
nanostructures in a device-compatible configuration. In the current paradigm, SAE is …

Selective area growth of nanomembranes (NMs), nanofins, and planar nanowires (NWs)
can pave the way for monolithic integration of III-V photonics with Si electronics and enable …

Selective area epitaxy at the nanoscale enables fabrication of high-quality nanostructures in
regular arrays with predefined geometry. Here, we investigate the growth mechanisms of …

The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …

Vertical growth rate of highly anisotropic III–V nanostructures, including the vapor–liquid–
solid or catalyst-free nanowires and quasi-one-dimensional nanomembranes obtained by …

Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation
mechanism or selective area growth (SAG) on different substrates, including Si, show great …

Predicted topological crystalline insulators such as Pb1− xSnxTe are an interesting
candidate for applications in quantum technology, as they can host spin‐polarized surface …

The knowledge of the band alignment in semiconductor heterostructures is crucial, as it
governs carrier confinement with many impacts on the performances of devices. By …

Semiconductor nanowires are believed to play a crucial role for future applications in
electronics, spintronics and quantum technologies. A potential candidate is HgTe but its …