Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …

Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …

The fabrication studies of silica/polystyrene (PS) colloidal microlens arrays with various
aspect ratios were performed on the III-nitride light-emitting diodes (LEDs). The use of …

The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …

The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …

The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary
InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing …

The gain characteristics of high Al-content AlGaN-delta-GaN quantum wells (QWs) are
investigated for mid-and deep-ultraviolet (UV) lasers. The insertion of an ultrathin GaN layer …