Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems
K Xu - Journal of Micromechanics and Microengineering, 2021 - iopscience.iop.org
In this paper, optoelectronic characteristics and related switching behavior of one
monolithically integrated silicon light-emitting device (LED) with an interesting wavelength …
monolithically integrated silicon light-emitting device (LED) with an interesting wavelength …
[HTML][HTML] Об обеспечении теплового режима светодиодного источника света
РР Шириев, АН Борисов, АА Валеев - Известия высших учебных …, 2022 - cyberleninka.ru
ЦЕЛЬ. Рассмотреть проблемы процесса теплопередачи в конструктивных элементах
светодиодного источника света. Описать систему охлаждения светодиодного …
светодиодного источника света. Описать систему охлаждения светодиодного …
Enhancement of Luminous Power and Efficiency in InGaN/GaN–Light Emitting Diode using high-k dielectric material
G Saranya, NM Sivamangai - Optical and Quantum Electronics, 2021 - Springer
A novel high-k dielectric material is proposed for InGaN/GaN–LED to improve the
performance. The proposed LED is analyzed and benchmarked with conventional LED …
performance. The proposed LED is analyzed and benchmarked with conventional LED …
Electrostatic Doping and Devices
RJE Hueting, G Gupta - Springer Handbook of Semiconductor Devices, 2022 - Springer
Electrostatic doping is widely emerging as an alternative approach to overcome the
limitations of traditional chemical doping to provide high charge carrier densities in …
limitations of traditional chemical doping to provide high charge carrier densities in …
[PDF][PDF] Charged polaritons in two-dimensional semiconductors
A Tiene - 2023 - webs.ftmc.uam.es
The injection of charged carriers in two-dimensional semiconductors, either through gating
or doping, has recently opened numerous novel exciting research directions and potential …
or doping, has recently opened numerous novel exciting research directions and potential …
[PDF][PDF] Enhancement of Luminous Power and Efficiency in InGaN/GaN LED using High-k Dielectric material
G Saranya, NM Sivamangai - Optical and Quantum electronics, 2020 - scholar.archive.org
InGaN/GaN-LED to improve the performance. The proposed LED is analyzed and
benchmarked with conventional LED using Technological Computer Aided Design (TCAD) …
benchmarked with conventional LED using Technological Computer Aided Design (TCAD) …
Учредители: Казанский государственный энергетический университет
РР ШИРИЕВ, АН БОРИСОВ, АА ВАЛЕЕВ - ИЗВЕСТИЯ ВЫСШИХ …, 2022 - elibrary.ru
ЦЕЛЬ. Рассмотреть проблемы процесса теплопередачи в конструктивных элементах
светодиодного источника света. Описать систему охлаждения светодиодного …
светодиодного источника света. Описать систему охлаждения светодиодного …
Enhancement of Luminous Power and Efficiency in InGaN/GaN based Light Emitting Diode using High-K Dielectric Material
NM Sivamangai - 2021 - researchsquare.com
A novel high-k dielectric material is proposed for InGaN/GaN-LED to improve the
performance. The proposed LED is analyzed and benchmarked with conventional LED …
performance. The proposed LED is analyzed and benchmarked with conventional LED …
Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices
G Gupta - 2020 - research.utwente.nl
This thesis broadly deals with two aspects. Firstly, it describes possible alternatives to
chemical doping in dimensionally scaled semiconductor devices based on alternative …
chemical doping in dimensionally scaled semiconductor devices based on alternative …