Source and drain isolation for CMOS nanosheet with one block mask
HOIL 21/70(2006. 01) HOIL 21/8238 (2006. 01) HOIL 29/06(2006. 01) HOIL 29/66(2006. 01)
HOIL 29/165(2006. 01) HOIL 27/092(2006. 01) US CI. CPC HOIL 21/823878 (2013. 01); …
HOIL 29/165(2006. 01) HOIL 27/092(2006. 01) US CI. CPC HOIL 21/823878 (2013. 01); …
Bottom channel isolation in nanosheet transistors
Provided is a nanosheet semiconductor device. In embodiments of the invention, the
nanosheet semiconductor device includes a channel nanosheet formed over a substrate …
nanosheet semiconductor device includes a channel nanosheet formed over a substrate …
Multiple work function nanosheet field effect transistor using sacrificial silicon germanium growth
(57) ABSTRACT A method of forming a semiconductor device that includes forming a stack
of nanosheets composed of a semiconductor material; and forming a sacrificial layer of a …
of nanosheets composed of a semiconductor material; and forming a sacrificial layer of a …
Method and structure of fabricating I-shaped silicon germanium vertical field-effect transistors
A method for manufacturing a semiconductor device includes forming a first semiconductor
layer having a first concentration of germanium on a semiconductor substrate, a second …
layer having a first concentration of germanium on a semiconductor substrate, a second …
Method and structure of fabricating I-shaped silicon vertical field-effect transistors
A method for manufacturing a semiconductor device includes forming a first silicon
germanium layer on a semiconductor substrate, forming a silicon layer on the first silicon …
germanium layer on a semiconductor substrate, forming a silicon layer on the first silicon …
Source and drain isolation for CMOS nanosheet with one block mask
Techniques for source/drain isolation in nanosheet devices are provided. In one aspect, a
method of forming a nanosheet device includes: forming an alternating series of …
method of forming a nanosheet device includes: forming an alternating series of …
Silicon residue removal in nanosheet transistors
(57) ABSTRACT A method for forming a nanosheet semiconductor device includes forming
a nanosheet stack comprising channel nanosheets. The method includes depositing silicon …
a nanosheet stack comprising channel nanosheets. The method includes depositing silicon …
Nanosheet transistor device with bottom isolation
R Xie, VS Basker, AM Greene, P Montanini - US Patent 11,387,319, 2022 - Google Patents
A method of forming a nanosheet transistor device is provided. The method includes forming
a segment stack of alternating intermediate sacrificial segments and nanosheet segments …
a segment stack of alternating intermediate sacrificial segments and nanosheet segments …
Nanosheet transistor having wrap-around bottom isolation
Embodiments of the invention are directed to a method of performing fabrication operations
to form a nanosheet field effect transistor (FET) device. The fabrication operations include …
to form a nanosheet field effect transistor (FET) device. The fabrication operations include …
Oxide isolated fin-type field-effect transistors
R Bao, H Jagannathan, PC Jamison… - US Patent 11,094,801, 2021 - Google Patents
According to an embodiment of the present invention, a semiconductor structure includes a
semiconductor substrate and a plurality of fins located on the semiconductor substrate. The …
semiconductor substrate and a plurality of fins located on the semiconductor substrate. The …